Advancements in InGaN-Based Red Micro-LEDs

Micro-LEDs have emerged as a promising fourth generation display technology with many advantages over traditional displays. However, the mass production of micro-LEDs still faces challenges, particularly in the production of high-quality red micro-LEDs. Low efficiency red micro-LEDs are a major challenge that needs to be overcome. In this paper, we focus on recent advancements in improving the device performance of InGaN-based red micro-LEDs. We summarize the various approaches taken by research groups in recent years to improve the efficiency and performance of red micro-LEDs at both the epitaxial and process levels. These include the use of InGaNOS substrates, increasing the density of V-shaped pits and other methods to improve crystal quality, the incorporation of nanostructures to enhance light extraction efficiency, and the optimization of fabrication processes to reduce defects and improve uniformity. These approaches have resulted in significant improvements in the efficiency and performance of red micro-LEDs. Despite these efforts, the development of efficient and reliable red micro-LEDs remains a critical challenge. Further research is needed to address the fundamental material and device physics underlying the performance limitations of red micro-LEDs.