Robert Nericua;Ke Wang;He Zhu;Roberto Gómez-García;Xi Zhu
{"title":"低损耗和紧凑型毫米波硅基滤波器:概览、绝缘体上硅技术的新发展和未来趋势","authors":"Robert Nericua;Ke Wang;He Zhu;Roberto Gómez-García;Xi Zhu","doi":"10.1109/JETCAS.2023.3345476","DOIUrl":null,"url":null,"abstract":"This paper presents an overview of Silicon-based millimeter-wave (mm-wave) passive devices for bandpass and bandstop filtering applications, while also reporting originally-conceived filter developments and future trends. First of all, the state-of-the-art on mm-wave low-loss bandpass filters (BPFs) is covered, and new BPF designs are shown. The engineered BPFs employ a center-tapped ring architecture with shunt-connected capacitors to realize a standard 2nd-order baseline BPF design, which is subsequently scaled to 30-GHz and 60-GHz operational frequencies. To increase the selectivity as well as the stopband rejection levels of this baseline BPF, the in-series cascade connection of the baseline BPF units is used for a higher-order BPF realization. For experimental-validation purposes, a total of four mm-wave BPFs based on these design strategies are implemented, fabricated in 45-nm Silicon-on-Insulator (SOI) complementary-metal-oxide-semiconductor-(CMOS) technology, and tested. Afterward, a review of Silicon-based-integrated bandstop filters (BSFs) operating in the mm-wave region is provided, which includes both reflective-type and reflectionless/absorptive filter realizations for RF-interference-suppression in highly-congested electromagnetic (EM) environments. Finally, future research trends in the Silicon-based-integrated filter area are discussed. They are expected to play a key role in the development of modern radio-frequency (RF) front-ends for emerging beyond 5G and EM-sensing scenarios.","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":"14 1","pages":"30-40"},"PeriodicalIF":3.7000,"publicationDate":"2023-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low-Loss and Compact Millimeter-Wave Silicon-Based Filters: Overview, New Developments in Silicon-on-Insulator Technology, and Future Trends\",\"authors\":\"Robert Nericua;Ke Wang;He Zhu;Roberto Gómez-García;Xi Zhu\",\"doi\":\"10.1109/JETCAS.2023.3345476\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents an overview of Silicon-based millimeter-wave (mm-wave) passive devices for bandpass and bandstop filtering applications, while also reporting originally-conceived filter developments and future trends. First of all, the state-of-the-art on mm-wave low-loss bandpass filters (BPFs) is covered, and new BPF designs are shown. The engineered BPFs employ a center-tapped ring architecture with shunt-connected capacitors to realize a standard 2nd-order baseline BPF design, which is subsequently scaled to 30-GHz and 60-GHz operational frequencies. To increase the selectivity as well as the stopband rejection levels of this baseline BPF, the in-series cascade connection of the baseline BPF units is used for a higher-order BPF realization. For experimental-validation purposes, a total of four mm-wave BPFs based on these design strategies are implemented, fabricated in 45-nm Silicon-on-Insulator (SOI) complementary-metal-oxide-semiconductor-(CMOS) technology, and tested. Afterward, a review of Silicon-based-integrated bandstop filters (BSFs) operating in the mm-wave region is provided, which includes both reflective-type and reflectionless/absorptive filter realizations for RF-interference-suppression in highly-congested electromagnetic (EM) environments. Finally, future research trends in the Silicon-based-integrated filter area are discussed. 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Low-Loss and Compact Millimeter-Wave Silicon-Based Filters: Overview, New Developments in Silicon-on-Insulator Technology, and Future Trends
This paper presents an overview of Silicon-based millimeter-wave (mm-wave) passive devices for bandpass and bandstop filtering applications, while also reporting originally-conceived filter developments and future trends. First of all, the state-of-the-art on mm-wave low-loss bandpass filters (BPFs) is covered, and new BPF designs are shown. The engineered BPFs employ a center-tapped ring architecture with shunt-connected capacitors to realize a standard 2nd-order baseline BPF design, which is subsequently scaled to 30-GHz and 60-GHz operational frequencies. To increase the selectivity as well as the stopband rejection levels of this baseline BPF, the in-series cascade connection of the baseline BPF units is used for a higher-order BPF realization. For experimental-validation purposes, a total of four mm-wave BPFs based on these design strategies are implemented, fabricated in 45-nm Silicon-on-Insulator (SOI) complementary-metal-oxide-semiconductor-(CMOS) technology, and tested. Afterward, a review of Silicon-based-integrated bandstop filters (BSFs) operating in the mm-wave region is provided, which includes both reflective-type and reflectionless/absorptive filter realizations for RF-interference-suppression in highly-congested electromagnetic (EM) environments. Finally, future research trends in the Silicon-based-integrated filter area are discussed. They are expected to play a key role in the development of modern radio-frequency (RF) front-ends for emerging beyond 5G and EM-sensing scenarios.
期刊介绍:
The IEEE Journal on Emerging and Selected Topics in Circuits and Systems is published quarterly and solicits, with particular emphasis on emerging areas, special issues on topics that cover the entire scope of the IEEE Circuits and Systems (CAS) Society, namely the theory, analysis, design, tools, and implementation of circuits and systems, spanning their theoretical foundations, applications, and architectures for signal and information processing.