利用非晶态 InGaAs 子电池提高三结太阳能电池的效率

IF 0.8 4区物理与天体物理 Q4 PHYSICS, APPLIED Technical Physics Letters Pub Date : 2024-03-14 DOI:10.1134/s1063785023900431

M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, M. V. Nakhimovich, R. A. Saliy, M. Z. Shvarts, N. A. Kalyuzhniy

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引用次数: 0

摘要

摘要研究了在广泛使用的 "经典 "GaInP/GaAs/Ge 异质结构中，用非晶生长技术形成的 InxGa1 - xAs 子电池取代下层锗而获得的 GaInP/GaAs/InxGa1 - xAs 三结太阳能电池的效率。根据独创的方法，找到了窄隙子电池中的最佳铟浓度。确定了铟浓度在 x = 0.11 至 0.36 之间的 InxGa1 - xAs 子电池的主要参数，并利用这些参数计算了 GaInP/GaAs/InxGa1 - xAs 太阳能电池的 IV 特性。结果表明，当 x = 0.28 时，三结太阳能电池的效率比 "传统 "太阳能电池提高了 3.4%（绝对值），达到 40.3%（AM1.5D）。此外，研究还表明，这种太阳能电池的效率可提高到 41%。

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Increasing the Efficiency of Triple-Junction Solar Cells Due to the Metamorphic InGaAs Subcell

Abstract

The efficiency of GaInP/GaAs/In_xGa_{1 –} _xAs triple-junction solar cells obtained by replacing (in the widely used “classical” GaInP/GaAs/Ge heterostructure) the lower germanium with In_xGa_{1 –} _xAs subcell formed using the metamorphic growth technology has been investigated. Based on an original approach, the optimal indium concentration in the narrow-gap subcell has been found. The main parameters of In_xGa_{1 –} _xAs subcells with an indium concentration from x = 0.11 to 0.36 were determined and were used to calculate the IV characteristics of GaInP/GaAs/In_xGa_{1 –} _xAs solar cells. It has been determined that at x = 0.28 the efficiency of the triple-junction solar cell increases by 3.4% (abs.) in comparison with the “classical” solar cell, reaching a value of 40.3% (AM1.5D). Also it has been shown that the efficiency of such solar cells can be increased up to 41%.

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来源期刊

Technical Physics Letters 物理-物理：应用

CiteScore

1.50

自引率

0.00%

发文量

审稿时长

2-4 weeks

期刊介绍： Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.