插入过渡金属的 H2dbp 簇的结构、电子和磁性能

IF 1.2 4区 材料科学 Q4 CHEMISTRY, PHYSICAL Surface Review and Letters Pub Date : 2024-02-24 DOI:10.1142/s0218625x24500847
ZHI LI, SHU-QI YANG, JIA-HUI YIN, JIA-CONG LI, SEDIGHEH ABBASI
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引用次数: 0

摘要

通过密度泛函理论研究了 H2DBP-M 簇合物的构型、电子和磁性。结果表明,H2DBP-M(M=Sc、Y、Zr、Nb、Lu 和 Hf)簇的 TM 原子偏离了簇的中心平面。H2DBP-M(M=Sc、Y 和 Lu)簇的偶极子幅度最大。根据每个原子的结合能和 HOMO-LUMO 间隙,H2DBP-Ni 和 H2DBP-Lu 簇最有利于合成。H2DBP-M 簇的 TM(TM=Sc、Zn、Y、Cd、Hf 和 Hg)原子的电荷转移量较大。H2DBP-M(M=钛∼钴和铜)团簇的 TM-d 轨道对费米级有很大贡献。除了 H2DBP-V 簇的 TM 原子自旋密度(V=2.459|e|)外,H2DBP-M 簇的 TM 原子自旋密度都降低到了 0。
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STRUCTURES, ELECTRONIC, AND MAGNETIC PROPERTIES OF TRANSITION METAL-INSERTED H2DBP CLUSTERS

The configurations, electronic, and magnetic properties of the H2DBP-M clusters have been investigated via density functional theory. The results reveal that the TM atoms for the H2DBP-M (M=Sc, Y, Zr, Nb, Lu, and Hf) clusters deviate from the center planes of the clusters. The H2DBP-M (M=Sc, Y, and Lu) clusters display the largest dipole magnitudes. Based on the binding energy per atom and HOMO-LUMO gap, the H2DBP-Ni and H2DBP-Lu clusters are the most favorable for synthesis. The charge transfer amounts of the TM (TM=Sc, Zn, Y, Cd, Hf, and Hg) atoms for the H2DBP-M clusters are larger. The TM-d orbitals of the H2DBP-M (M=TiCo and Cu) clusters contribute significantly to the Fermi levels. The spin densities of the TM atoms for the H2DBP-M clusters reduce to 0 except for that (V=2.459|e|) of the H2DBP-V clusters.

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来源期刊
Surface Review and Letters
Surface Review and Letters 工程技术-物理:凝聚态物理
CiteScore
2.20
自引率
9.10%
发文量
139
审稿时长
4.2 months
期刊介绍: This international journal is devoted to the elucidation of properties and processes that occur at the boundaries of materials. The scope of the journal covers a broad range of topics in experimental and theoretical studies of surfaces and interfaces. Both the physical and chemical properties are covered. The journal also places emphasis on emerging areas of cross-disciplinary research where new phenomena occur due to the presence of a surface or an interface. Representative areas include surface and interface structures; their electronic, magnetic and optical properties; dynamics and energetics; chemical reactions at surfaces; phase transitions, reconstruction, roughening and melting; defects, nucleation and growth; and new surface and interface characterization techniques.
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