研究异质结构硅太阳能电池的抗辐射能力

IF 0.8 4区物理与天体物理 Q4 PHYSICS, APPLIED Technical Physics Letters Pub Date : 2024-03-14 DOI:10.1134/s1063785023900741

V. S. Kalinovskii, E. I. Terukov, K. K. Prudchenko, A. A. Bazeley, E. V. Kontrosh, I. A. Tolkachev, A. A. Titov

{"title":"研究异质结构硅太阳能电池的抗辐射能力","authors":"V. S. Kalinovskii, E. I. Terukov, K. K. Prudchenko, A. A. Bazeley, E. V. Kontrosh, I. A. Tolkachev, A. A. Titov","doi":"10.1134/s1063785023900741","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3>The radiation resistance of different types of heterostructural silicon solar cells under irradiation with 1 MeV electrons in the fluence range 2.5 × 1014–1 × 1015 cm–2 has been studied. Studies have shown that the smallest degradation of the “saturation” currents of the diffusion current flow mechanism from J0d ≤ 5 × 10–13 to J0d ≤ 3 × 10–12 A/cm2 and efficiency from 19.2 to 13.6% (AM0, 1367 W/m2) were n-α-Si:H/c-p(Ga)/p-α-Si:H and n-c-Si:H/c-p(Ga)/p-α-Si:H. The results obtained make it possible to evaluate the prospects for the use of heterostructure silicon solar cells for low-orbit spacecraft.","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"19 1","pages":""},"PeriodicalIF":0.8000,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of Radiation Resistance of Heterostructure Silicon Solar Cells\",\"authors\":\"V. S. Kalinovskii, E. I. Terukov, K. K. Prudchenko, A. A. Bazeley, E. V. Kontrosh, I. A. Tolkachev, A. A. Titov\",\"doi\":\"10.1134/s1063785023900741\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3>The radiation resistance of different types of heterostructural silicon solar cells under irradiation with 1 MeV electrons in the fluence range 2.5 × 1014–1 × 1015 cm–2 has been studied. Studies have shown that the smallest degradation of the “saturation” currents of the diffusion current flow mechanism from J0d ≤ 5 × 10–13 to J0d ≤ 3 × 10–12 A/cm2 and efficiency from 19.2 to 13.6% (AM0, 1367 W/m2) were n-α-Si:H/c-p(Ga)/p-α-Si:H and n-c-Si:H/c-p(Ga)/p-α-Si:H. The results obtained make it possible to evaluate the prospects for the use of heterostructure silicon solar cells for low-orbit spacecraft.\",\"PeriodicalId\":784,\"journal\":{\"name\":\"Technical Physics Letters\",\"volume\":\"19 1\",\"pages\":\"\"},\"PeriodicalIF\":0.8000,\"publicationDate\":\"2024-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1134/s1063785023900741\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063785023900741","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

摘要

摘要研究了不同类型的异质结构硅太阳能电池在 1 MeV 电子辐照下的耐辐射性，电子通量范围为 2.5 × 1014-1 × 1015 cm-2。研究表明，n-α-Si:H/c-p(Ga)/p-α-Si:H 和 n-c-Si:H/c-p(Ga)/p-α-Si:H 的扩散电流流动机制的 "饱和 "电流从 J0d ≤ 5 × 10-13 降至 J0d ≤ 3 × 10-12 A/cm2，效率从 19.2% 降至 13.6%（AM0，1367 W/m2），降幅最小。所获得的结果使我们有可能对低轨道航天器使用异质结构硅太阳能电池的前景进行评估。

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Investigation of Radiation Resistance of Heterostructure Silicon Solar Cells

Abstract

The radiation resistance of different types of heterostructural silicon solar cells under irradiation with 1 MeV electrons in the fluence range 2.5 × 10¹⁴–1 × 10¹⁵ cm^–2 has been studied. Studies have shown that the smallest degradation of the “saturation” currents of the diffusion current flow mechanism from J_0d ≤ 5 × 10^–13 to J_0d ≤ 3 × 10^–12 A/cm² and efficiency from 19.2 to 13.6% (AM0, 1367 W/m²) were n-α-Si:H/c-p(Ga)/p-α-Si:H and n-c-Si:H/c-p(Ga)/p-α-Si:H. The results obtained make it possible to evaluate the prospects for the use of heterostructure silicon solar cells for low-orbit spacecraft.

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来源期刊

Technical Physics Letters 物理-物理：应用

CiteScore

1.50

自引率

0.00%

发文量

审稿时长

2-4 weeks

期刊介绍： Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.