{"title":"基于灯丝的忆阻器开关模型","authors":"A.V. Fadeev, K.V. Rudenko","doi":"10.1016/j.mee.2024.112179","DOIUrl":null,"url":null,"abstract":"<div><p>The filaments rupture and recovery in oxide-type memristors have been theoretically studied. The model is based on the kinetics of oxygen vacancies and includes Joule heating of the oxide medium, which enhances the diffusion and drift of oxygen vacancies in an external electric field. The current-voltage characteristic of the model structure was obtained. Comparison with experimental results allowed for the determination of the constants used in the modeling. The peculiarity of the current-voltage characteristic observed in experimental works is explained.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.6000,"publicationDate":"2024-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Filament-based memristor switching model\",\"authors\":\"A.V. Fadeev, K.V. Rudenko\",\"doi\":\"10.1016/j.mee.2024.112179\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The filaments rupture and recovery in oxide-type memristors have been theoretically studied. The model is based on the kinetics of oxygen vacancies and includes Joule heating of the oxide medium, which enhances the diffusion and drift of oxygen vacancies in an external electric field. The current-voltage characteristic of the model structure was obtained. Comparison with experimental results allowed for the determination of the constants used in the modeling. The peculiarity of the current-voltage characteristic observed in experimental works is explained.</p></div>\",\"PeriodicalId\":18557,\"journal\":{\"name\":\"Microelectronic Engineering\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.6000,\"publicationDate\":\"2024-03-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronic Engineering\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0167931724000480\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronic Engineering","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167931724000480","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
The filaments rupture and recovery in oxide-type memristors have been theoretically studied. The model is based on the kinetics of oxygen vacancies and includes Joule heating of the oxide medium, which enhances the diffusion and drift of oxygen vacancies in an external electric field. The current-voltage characteristic of the model structure was obtained. Comparison with experimental results allowed for the determination of the constants used in the modeling. The peculiarity of the current-voltage characteristic observed in experimental works is explained.
期刊介绍：
Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.
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