单壁碳纳米管中硼替代缺陷的拓扑结构:第一原理研究

IF 3.1 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Carbon Trends Pub Date : 2024-03-08 DOI:10.1016/j.cartre.2024.100337
Wutthisak Prachamon , Oruethai Jaiboon , Sittipong Komin , Chesta Ruttanapun , Sukit Limpijumnong
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引用次数: 0

摘要

这是对掺硼单壁碳纳米管的理论研究。位于单壁碳纳米管不同位置的原始纳米域的相同拓扑结构会导致不同的电子带结构。我们提出了一个 ϕ 项。密度泛函理论对范德华相互作用进行了校正,并用于进行周期性边界条件几何优化,硼形成了原始纳米域的拓扑结构。计算得到的整体结构和局部结构光谱参数可用于与实验结果进行比较,以证实理论模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Topology of boron substitutional defects in single-walled carbon nanotubes: A first-principles study

This is a theoretical study of boron-doped single-walled carbon nanotubes. The same topology of primitive nanodomains, located at different positions on single-walled carbon nanotubes, leads to different electronic band structures. We propose a ϕ term. Density functional theory was corrected for van der Waals interactions and used to carry out the periodic boundary condition geometry optimization, where boron formed the topologies of primitive nanodomains. The calculated bulk structure and local structure spectroscopic parameters can be used for comparison with experimental results to confirm the theoretical models.

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来源期刊
Carbon Trends
Carbon Trends Materials Science-Materials Science (miscellaneous)
CiteScore
4.60
自引率
0.00%
发文量
88
审稿时长
77 days
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