利用 Cl2 等离子处理和硫气退火增强 PVD-WS2 薄膜的导电性

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of the Electron Devices Society Pub Date : 2024-03-18 DOI:10.1109/JEDS.2024.3378745

Keita Kurohara;Shinya Imai;Takuya Hamada;Tetsuya Tatsumi;Shigetaka Tomiya;Kuniyuki Kakushima;Kazuo Tsutsui;Hitoshi Wakabayashi

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引用次数: 0

摘要

二硫化钨（WS2）薄膜是一种物理气相沉积（PVD）技术，采用溅射法（即物理气相沉积），通过氯（Cl2）等离子体处理和硫气退火（SVA）增强了其导电性。要将 WS2 薄膜用于热电设备，必须控制其载流子浓度。因此，我们将 WS2 薄膜暴露在 Cl2-等离子体中，作为一种掺杂方法。此外，还进行了 SVA 处理，以提高薄膜的结晶度，并可能引入活化掺杂剂。结果，经 Cl2- 等离子体处理的 PVD-WS2 薄膜的电导率（0.440 S/m）比未经处理的 PVD-WS2 薄膜的电导率（0.201 S/m）提高了一倍多。根据 X 射线光电子能谱中观察到的正峰值移动，本实验中的掺杂类型被认为是 n 型。

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Conductivity Enhancement of PVD-WS2 Films Using Cl2-Plasma Treatment Followed by Sulfur-Vapor Annealing

The conductivity of tungsten disulfide (WS2) films using sputtering, which is a physical vapor deposition (PVD), was enhanced using a chlorine (Cl2)-plasma treatment and sulfur-vapor annealing (SVA). For WS2 films to be used in thermoelectric devices, its carrier concentration must be controlled. Therefore, we exposed WS2 films to Cl2-plasma as a doping method. In addition, SVA was performed to improve the crystallinity of the film and potentially introduce activating dopants. Consequently, the conductivity of the Cl2-plasma-treated PVD-WS2 films (0.440 S/m) more than doubled compared with that of an untreated PVD-WS2 film (0.201 S/m). The doping type in this experiment is considered to be n-type on the basis of a positive peak shift observed in the X-ray photoelectron spectra.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.