An Insight Analysis of In0.7Ga0.3N Based pn Homo-Junction Solar Cell using SCAPS-1D Simulation Software

An insight analysis of In_0.7Ga_0.3N based pn homo-junction solar cell structure has been carried out using simulation software. A novel solar cell structure of n+ buffer contact layer/n window layer/p absorber layer/p+ back absorber layer has been proposed after device optimization. We have found that under the sun spectrum of AM 1.5 of 1 KW/m² operating at 300 K, the solar cell with low series resistance of 3 Ω cm², highly doped (1×10¹⁹ cm^–3) n+ layer as buffer contact layer and p+ layer of 200 nm thick as back absorber layer on top of back metal contact, enable us to achieve an efficient solar cell. We found that doping concentration of \(1 \times {{10}^{{16}}}{\text{ c}}{{{\text{m}}}^{{ - 3}}}\) in both active n and p layer, with 30 nm and 1.0 \({{\mu m}}\) of thickness, respectively, would allow us to achieve short circuit current density of \(35{{{\text{ mA}}} \mathord{\left/ {\vphantom {{{\text{mA}}} {{\text{c}}{{{\text{m}}}^{2}}}}} \right. \kern-0em} {{\text{c}}{{{\text{m}}}^{2}}}}\), open circuit voltage of 1.0 V, overall efficiency of 28.32% and fill factor value of 80% from the solar cell. If we could further reduce the series resistance of In_0.7Ga_0.3N pn homo-junction solar cell to ideal one, it may allow us to have even higher overall efficiency and fill factor values of 31 and 86%, respectively.