{"title":"超声喷雾热解法制造的掺 F Sno2 的结构、光学、电学和纳米力学性能","authors":"Jaewon Kim, Gahui Kim, Young-Bae Park","doi":"10.1007/s13391-024-00489-w","DOIUrl":null,"url":null,"abstract":"<div><p>Transparent conductive oxides (TCOs) are in high demand by optoelectronic devices such as light-emitting diodes, phototransistors, touchscreens, solar cells, and low-emissivity windows. Tin-doped indium oxide (ITO) material is the most predominant in the market and is utilised among the various TCO materials. However, the lack of raw materials and the high cost of indium materials have necessitated the exploration of cost-effective TCOs that can serve as viable alternatives without compromising the desired optical and electrical properties. Tin oxide (SnO<sub>2</sub>) films emerge as a promising candidate, offering several benefits, including abundant material sources, inexpensiveness, and non-toxicity. It anticipates producing a higher visible transmittance, excellent electrical conductivity, and good mechanical properties compared to ITO. Moreover, SnO<sub>2</sub> can increase its electrical conductivity by introducing representative dopant elements such as Sb, and F. However, structural, optical, and mechanical properties can affect additional dopant elements. Herein, we have demonstrated fluorine-doped tin oxide (FTO) thin films as a function of F dopant concentration by ultrasonic spray pyrolysis. The FTO thin films achieved excellent properties for FTO coatings such as polycrystalline structure, electrical conductivity (<i>ρ</i> = 9.1 × 10<sup>–5</sup> Ω cm), transmittance in the visible region (average visible transmittance up to 85.0%, with peak values of 96.5%) with a wider band gap between 3.80 and 4.28 eV. The increasing elastic modulus and hardness are related to significant grain boundaries, reaching the highest values of 154.5 ± 18.6 and 12.3 ± 3.6 GPa, respectively. The measured interface adhesion between SnO<sub>2</sub>/Si substrate is 9.32 J/m<sup>2</sup>.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 4","pages":"402 - 413"},"PeriodicalIF":2.1000,"publicationDate":"2024-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural, Optical, Electrical, and Nanomechanical Properties of F-Doped Sno2 Fabricated by Ultrasonic Spray Pyrolysis\",\"authors\":\"Jaewon Kim, Gahui Kim, Young-Bae Park\",\"doi\":\"10.1007/s13391-024-00489-w\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Transparent conductive oxides (TCOs) are in high demand by optoelectronic devices such as light-emitting diodes, phototransistors, touchscreens, solar cells, and low-emissivity windows. Tin-doped indium oxide (ITO) material is the most predominant in the market and is utilised among the various TCO materials. However, the lack of raw materials and the high cost of indium materials have necessitated the exploration of cost-effective TCOs that can serve as viable alternatives without compromising the desired optical and electrical properties. Tin oxide (SnO<sub>2</sub>) films emerge as a promising candidate, offering several benefits, including abundant material sources, inexpensiveness, and non-toxicity. It anticipates producing a higher visible transmittance, excellent electrical conductivity, and good mechanical properties compared to ITO. Moreover, SnO<sub>2</sub> can increase its electrical conductivity by introducing representative dopant elements such as Sb, and F. However, structural, optical, and mechanical properties can affect additional dopant elements. Herein, we have demonstrated fluorine-doped tin oxide (FTO) thin films as a function of F dopant concentration by ultrasonic spray pyrolysis. The FTO thin films achieved excellent properties for FTO coatings such as polycrystalline structure, electrical conductivity (<i>ρ</i> = 9.1 × 10<sup>–5</sup> Ω cm), transmittance in the visible region (average visible transmittance up to 85.0%, with peak values of 96.5%) with a wider band gap between 3.80 and 4.28 eV. The increasing elastic modulus and hardness are related to significant grain boundaries, reaching the highest values of 154.5 ± 18.6 and 12.3 ± 3.6 GPa, respectively. The measured interface adhesion between SnO<sub>2</sub>/Si substrate is 9.32 J/m<sup>2</sup>.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>\",\"PeriodicalId\":536,\"journal\":{\"name\":\"Electronic Materials Letters\",\"volume\":\"20 4\",\"pages\":\"402 - 413\"},\"PeriodicalIF\":2.1000,\"publicationDate\":\"2024-03-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electronic Materials Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s13391-024-00489-w\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronic Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s13391-024-00489-w","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Structural, Optical, Electrical, and Nanomechanical Properties of F-Doped Sno2 Fabricated by Ultrasonic Spray Pyrolysis
Transparent conductive oxides (TCOs) are in high demand by optoelectronic devices such as light-emitting diodes, phototransistors, touchscreens, solar cells, and low-emissivity windows. Tin-doped indium oxide (ITO) material is the most predominant in the market and is utilised among the various TCO materials. However, the lack of raw materials and the high cost of indium materials have necessitated the exploration of cost-effective TCOs that can serve as viable alternatives without compromising the desired optical and electrical properties. Tin oxide (SnO2) films emerge as a promising candidate, offering several benefits, including abundant material sources, inexpensiveness, and non-toxicity. It anticipates producing a higher visible transmittance, excellent electrical conductivity, and good mechanical properties compared to ITO. Moreover, SnO2 can increase its electrical conductivity by introducing representative dopant elements such as Sb, and F. However, structural, optical, and mechanical properties can affect additional dopant elements. Herein, we have demonstrated fluorine-doped tin oxide (FTO) thin films as a function of F dopant concentration by ultrasonic spray pyrolysis. The FTO thin films achieved excellent properties for FTO coatings such as polycrystalline structure, electrical conductivity (ρ = 9.1 × 10–5 Ω cm), transmittance in the visible region (average visible transmittance up to 85.0%, with peak values of 96.5%) with a wider band gap between 3.80 and 4.28 eV. The increasing elastic modulus and hardness are related to significant grain boundaries, reaching the highest values of 154.5 ± 18.6 and 12.3 ± 3.6 GPa, respectively. The measured interface adhesion between SnO2/Si substrate is 9.32 J/m2.
期刊介绍:
Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.