超声喷雾热解法制造的掺 F Sno2 的结构、光学、电学和纳米力学性能

IF 2.1 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Electronic Materials Letters Pub Date : 2024-03-23 DOI:10.1007/s13391-024-00489-w
Jaewon Kim, Gahui Kim, Young-Bae Park
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引用次数: 0

摘要

发光二极管、光电晶体管、触摸屏、太阳能电池和低辐射窗等光电设备对透明导电氧化物(TCO)的需求量很大。在各种 TCO 材料中,掺锡氧化铟(ITO)材料是市场上最主要的材料。然而,由于原材料的缺乏和铟材料的高成本,人们不得不探索具有成本效益的 TCO 材料,以便在不影响所需的光学和电气性能的前提下,将其作为可行的替代品。氧化锡(SnO2)薄膜是一种很有前途的候选材料,它具有多种优点,包括材料来源丰富、不敏感和无毒。与 ITO 相比,它有望产生更高的可见光透射率、出色的导电性和良好的机械性能。此外,二氧化锡可以通过引入具有代表性的掺杂元素(如锑和氟)来提高其导电性。在此,我们通过超声波喷雾热解技术展示了氟掺杂氧化锡(FTO)薄膜与 F 掺杂浓度的函数关系。这些 FTO 薄膜具有 FTO 涂层的优异特性,如多晶结构、导电性(ρ = 9.1 × 10-5 Ω cm)、可见光区域的透射率(平均可见光透射率高达 85.0%,峰值为 96.5%)以及 3.80 至 4.28 eV 之间较宽的带隙。弹性模量和硬度的增加与明显的晶界有关,最高值分别为 154.5 ± 18.6 和 12.3 ± 3.6 GPa。测得的二氧化锡/硅衬底之间的界面粘附力为 9.32 J/m2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Structural, Optical, Electrical, and Nanomechanical Properties of F-Doped Sno2 Fabricated by Ultrasonic Spray Pyrolysis

Transparent conductive oxides (TCOs) are in high demand by optoelectronic devices such as light-emitting diodes, phototransistors, touchscreens, solar cells, and low-emissivity windows. Tin-doped indium oxide (ITO) material is the most predominant in the market and is utilised among the various TCO materials. However, the lack of raw materials and the high cost of indium materials have necessitated the exploration of cost-effective TCOs that can serve as viable alternatives without compromising the desired optical and electrical properties. Tin oxide (SnO2) films emerge as a promising candidate, offering several benefits, including abundant material sources, inexpensiveness, and non-toxicity. It anticipates producing a higher visible transmittance, excellent electrical conductivity, and good mechanical properties compared to ITO. Moreover, SnO2 can increase its electrical conductivity by introducing representative dopant elements such as Sb, and F. However, structural, optical, and mechanical properties can affect additional dopant elements. Herein, we have demonstrated fluorine-doped tin oxide (FTO) thin films as a function of F dopant concentration by ultrasonic spray pyrolysis. The FTO thin films achieved excellent properties for FTO coatings such as polycrystalline structure, electrical conductivity (ρ = 9.1 × 10–5 Ω cm), transmittance in the visible region (average visible transmittance up to 85.0%, with peak values of 96.5%) with a wider band gap between 3.80 and 4.28 eV. The increasing elastic modulus and hardness are related to significant grain boundaries, reaching the highest values of 154.5 ± 18.6 and 12.3 ± 3.6 GPa, respectively. The measured interface adhesion between SnO2/Si substrate is 9.32 J/m2.

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来源期刊
Electronic Materials Letters
Electronic Materials Letters 工程技术-材料科学:综合
CiteScore
4.70
自引率
20.80%
发文量
52
审稿时长
2.3 months
期刊介绍: Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.
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