增强有机光伏器件的室内性能:使用氨基苯甲酸基自组装单层的界面工程

Seunghyun Oh, Ye Lim Kang, Tae Hyuk Kim, Seon Joong Kim, Min Jong Lee, Gyeong Min Lee, M. A. Saeed, Jae Won Shim
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摘要

有机光伏(OPV)器件的性能取得了长足进步,可促进其在物联网应用中的使用。然而,要在室内环境中使用稳定、高效的 OPV 器件实现出色的光稳定性和高效率却相当困难。为了解决这个问题,本研究用 4- 氨基苯甲酸(ABA)自组装单层(SAM)修饰了氧化锌(ZnO)电子传输层(ETL),并将这种修饰的影响与带有 PM6:L8-BO 光活性层的 OPV 器件的室内性能进行了关联。经 ABA 处理的氧化锌 ETL 的功函数(从 4.51 eV 降至 4.04 eV)、表面粗糙度(从 0.201 nm 降至 0.177 nm)和氧化铟锡电极的亲水性显著降低;这有助于从器件中选择性地提取电荷载流子,并最大限度地减少陷阱辅助重组损耗。此外,氧化锌 ETL 的 ABA 处理大大提高了电子迁移率和抗重组能力。它降低了陷阱密度,从而使基于氧化锌/ABA 的器件实现了更高的性能。因此,在 1000 lx 卤素(HLG)照明条件下(Pout, max = 354.48 和 309 µA cm-2),基于 ZnO/ABA 的器件的最大功率输出比未进行任何 ZnO 表面修饰的器件高出 14.68%。此外,在热照明条件下(1000 lx HLG 照明),基于氧化锌/ABA 的器件在 120 小时内保持了约 74% 的初始功率转换效率,明显高于不含 ABA 的同等器件(约 55%)。
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Enhancing the indoor performance of organic photovoltaic devices: interface engineering with an aminobenzoic-acid-based self-assembled monolayer
Significant advances in the performance of organic photovoltaic (OPV) devices can facilitate their use in Internet of Things applications. However, achieving excellent photostability and high efficiency using stable, efficient OPV devices in indoor settings is considerably difficult. To address this issue, a zinc oxide (ZnO) electron transport layer (ETL) was modified with a self-assembled monolayer (SAM) of 4-aminobenzoic acid (ABA) in the present study, and the impact of this modification was correlated with the indoor performance of an OPV device with the PM6:L8-BO photoactive layer. The ABA-treated ZnO ETL exhibited a significant reduction in the work function (from 4.51 to 4.04 eV), surface roughness (from 0.201 to 0.177 nm), and hydrophilicity of an indium-tin-oxide electrode; this aided in selectively extracting charge carriers from the device and minimizing trap-assisted recombination losses. Additionally, the ABA treatment of the ZnO ETL considerably enhanced the electron mobility and recombination resistance. It reduced the trap density, thereby enabling the ZnO/ABA-based device to achieve improved performance. Consequently, the ZnO/ABA-based device exhibited a noteworthy 14.68% higher maximum power output than that of the device without any ZnO surface modification under 1000 lx halogen (HLG) illumination (Pout, max = 354.48 and 309 µA cm−2, respectively). Moreover, under thermal illumination conditions (1000 lx HLG lighting), the ZnO/ABA-based device sustained ~74% of its initial power conversion efficiency over 120 h, significantly higher than its ABA-free equivalent (~55%).
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