采用倍频桥接芯片的 6.4 GB/s/针 nand 闪存多芯片封装,用于可扩展性能和容量的存储系统

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE IEEE Solid-State Circuits Letters Pub Date : 2024-03-14 DOI:10.1109/LSSC.2024.3377263
Shinichi Ikeda;Akira Iwata;Goichi Otomo;Tomoaki Suzuki;Hiroaki Iijima;Mikio Shiraishi;Shinya Kawakami;Masatomo Eimitsu;Yoshiki Matsuoka;Kiyohito Sato;Shigehiro Tsuchiya;Yoshinori Shigeta;Takuma Aoyama
{"title":"采用倍频桥接芯片的 6.4 GB/s/针 nand 闪存多芯片封装,用于可扩展性能和容量的存储系统","authors":"Shinichi Ikeda;Akira Iwata;Goichi Otomo;Tomoaki Suzuki;Hiroaki Iijima;Mikio Shiraishi;Shinya Kawakami;Masatomo Eimitsu;Yoshiki Matsuoka;Kiyohito Sato;Shigehiro Tsuchiya;Yoshinori Shigeta;Takuma Aoyama","doi":"10.1109/LSSC.2024.3377263","DOIUrl":null,"url":null,"abstract":"This letter describes a NAND flash memory multichip package (NAND MCP) incorporating a developed LSI interface (IF) Chip (Bridge Chip) in which the IF to and from the solid-state drive (SSD) controller has twice the speed as that of the IF to and from the NAND dies even with multiple packages on each printed circuit board (PCB) channel. This NAND MCP allows to reduce the number of NAND IF channels on the PCB while retaining the total bandwidth of the SSD and increasing the capacity. The Bridge Chip employs a 2:1 frequency multiplying function to bridge the speed gap, a fast-lock phase-locked loop (PLL) with an extended pull-in range and 16-cycle lock time to enhance the IF performance with its input-jitter filtering effect, and equalizers to compensate for intersymbol interference and reflected noise in up to a 4-drop configuration. The Bridge Chip implemented in a 12-nm CMOS process is demonstrated at 6.4 Gb/s/pin with 2.85-pJ/b I/O energy efficiency in a read operation. The NAND MCP incorporating the Bridge Chip and eight 1-Tb NAND dies achieves data transmission to and from field-programmable gate array (FPGA) at twice the speed of the NAND IF in a 2-drop configuration.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"7 ","pages":"115-118"},"PeriodicalIF":2.2000,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 6.4-Gb/s/pin nand Flash Memory Multichip Package Employing a Frequency Multiplying Bridge Chip for Scalable Performance and Capacity Storage Systems\",\"authors\":\"Shinichi Ikeda;Akira Iwata;Goichi Otomo;Tomoaki Suzuki;Hiroaki Iijima;Mikio Shiraishi;Shinya Kawakami;Masatomo Eimitsu;Yoshiki Matsuoka;Kiyohito Sato;Shigehiro Tsuchiya;Yoshinori Shigeta;Takuma Aoyama\",\"doi\":\"10.1109/LSSC.2024.3377263\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter describes a NAND flash memory multichip package (NAND MCP) incorporating a developed LSI interface (IF) Chip (Bridge Chip) in which the IF to and from the solid-state drive (SSD) controller has twice the speed as that of the IF to and from the NAND dies even with multiple packages on each printed circuit board (PCB) channel. This NAND MCP allows to reduce the number of NAND IF channels on the PCB while retaining the total bandwidth of the SSD and increasing the capacity. The Bridge Chip employs a 2:1 frequency multiplying function to bridge the speed gap, a fast-lock phase-locked loop (PLL) with an extended pull-in range and 16-cycle lock time to enhance the IF performance with its input-jitter filtering effect, and equalizers to compensate for intersymbol interference and reflected noise in up to a 4-drop configuration. The Bridge Chip implemented in a 12-nm CMOS process is demonstrated at 6.4 Gb/s/pin with 2.85-pJ/b I/O energy efficiency in a read operation. The NAND MCP incorporating the Bridge Chip and eight 1-Tb NAND dies achieves data transmission to and from field-programmable gate array (FPGA) at twice the speed of the NAND IF in a 2-drop configuration.\",\"PeriodicalId\":13032,\"journal\":{\"name\":\"IEEE Solid-State Circuits Letters\",\"volume\":\"7 \",\"pages\":\"115-118\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Solid-State Circuits Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10472519/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10472519/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0

摘要

本信介绍了一种 NAND 闪存多芯片封装(NAND MCP),其中集成了开发的 LSI 接口(IF)芯片(桥接芯片),即使每个印刷电路板(PCB)通道上有多个封装,与固态硬盘(SSD)控制器之间的 IF 速度也是与 NAND 芯片之间的 IF 速度的两倍。这种 NAND MCP 可以减少 PCB 上 NAND IF 通道的数量,同时保持固态硬盘的总带宽并增加容量。桥接芯片采用 2:1 倍频功能来缩小速度差距,采用具有扩展拉入范围和 16 个周期锁定时间的快速锁定锁相环 (PLL),通过其输入抖动滤波效果来提高中频性能,并采用均衡器来补偿高达 4 滴配置中的符号间干扰和反射噪声。桥接芯片采用 12 纳米 CMOS 工艺实现,在读取操作中的能效为 6.4 Gb/s/pin,I/O 能效为 2.85-pJ/b。集成了桥接芯片和 8 个 1-Tb NAND 芯片的 NAND MCP 在 2 滴配置中实现了与现场可编程门阵列 (FPGA) 之间的数据传输,传输速度是 NAND IF 的两倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A 6.4-Gb/s/pin nand Flash Memory Multichip Package Employing a Frequency Multiplying Bridge Chip for Scalable Performance and Capacity Storage Systems
This letter describes a NAND flash memory multichip package (NAND MCP) incorporating a developed LSI interface (IF) Chip (Bridge Chip) in which the IF to and from the solid-state drive (SSD) controller has twice the speed as that of the IF to and from the NAND dies even with multiple packages on each printed circuit board (PCB) channel. This NAND MCP allows to reduce the number of NAND IF channels on the PCB while retaining the total bandwidth of the SSD and increasing the capacity. The Bridge Chip employs a 2:1 frequency multiplying function to bridge the speed gap, a fast-lock phase-locked loop (PLL) with an extended pull-in range and 16-cycle lock time to enhance the IF performance with its input-jitter filtering effect, and equalizers to compensate for intersymbol interference and reflected noise in up to a 4-drop configuration. The Bridge Chip implemented in a 12-nm CMOS process is demonstrated at 6.4 Gb/s/pin with 2.85-pJ/b I/O energy efficiency in a read operation. The NAND MCP incorporating the Bridge Chip and eight 1-Tb NAND dies achieves data transmission to and from field-programmable gate array (FPGA) at twice the speed of the NAND IF in a 2-drop configuration.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
期刊最新文献
Terahertz Sensing With CMOS-RFIC:Feasibility Verification for Short-Range Imaging Using 300-GHz MIMO Radar Analysis and Optimization of Parasitics-Induced Peak Frequency Shift in Gain-Boosted N-Path Switched-Capacitor Bandpass Filter A 28-GHz Variable-Gain Phase Shifter With Phase Compensation Using Analog Addition and Subtraction Method A 33.06-Gb/s Reconfigurable Galois Field oFEC Decoder for Optical Intersatellite Communication A 1–3 GHz Fast-Locking Frequency Synthesizer Based on a Combination of PLL and MDLL With Auto-Zero Phase-Error Compensation
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1