Tomoya Tsutsumi, Kazuki Goshima, Yoshiharu Kirihara, Tatsuki Okazaki, Akira Yasui, K. Kakushima, Yuichiro Mitani, H. Nohira
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引用次数: 0
摘要
通过角分辨硬 X 射线光电子能谱（HAXPES）测量，研究了等离子体处理对 AlScN 薄膜的影响。结果证实，对 AlScN 进行氧等离子处理往往会增加薄膜中的氧化物成分，而不是氮化物成分。MIM 电容器中电流导通/关断比的增加归因于 AlScN 中氮空位数量的减少。进一步等离子氧化处理后导通/关断比的降低是由于表面一侧的薄膜材料从氮化物变成了氧化物。研究还证实，氮化预处理 1 分钟可降低 AlScN 的氧化敏感性。此外，Sc 原子的氧化抑制作用比 Al 原子更明显。这表明氮化过程减少了 Sc 原子周围氮空位的数量。
Effects of plasma oxidation and plasma nitridation on chemical bonding state of AlScN evaluated by AR-HAXPES
The effect of plasma treatment on AlScN films measured by angle-resolved hard X-ray photoelectron spectroscopy (HAXPES) is investigated. I It was confirmed that oxygen plasma treatment of AlScN tends to increase the oxide component relative to the nitride component in the film. The increase in the on/off ratio of the current in the MIM capacitor was attributed to the decrease in the number of nitrogen vacancies in AlScN. The decrease in the on/off ratio after further plasma oxidation treatment is due to the change from nitride to oxide film material on the surface side. It was also confirmed that the nitriding pretreatment for 1 min makes AlScN less susceptible to oxidation. Furthermore, the inhibition of oxidation was more pronounced for Sc atoms than for Al atoms. This suggests that the nitridation process reduced the number of nitrogen vacancies around Sc atoms.
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