压力下 RbGeF3 结构、电气、光学和机械特性的变化:DFT 见解

Sabuj Chowdhury, Jaba Kusum Chakraborty
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摘要

本研究采用密度泛函理论,深入研究了卤化物 RbGeF3 制成的包晶在 0 至 50 GPa 的各种静水压力下的物理性质。这项研究旨在降低 RbGeF3 在压力下的电子带隙,从而增强其光学特性,并评估化合物在光电和电气用途中的适用性。结构特征的精确度相对较高,与早先发表的研究结果非常吻合。晶格特征和链长的大幅下降也是原子间相互作用增强的结果。加压分别显示了 Rb-F 和 Ge-F 之间键的离子和共价特性。施加静水压力时,电导率和光吸收率都会发生明显变化。通过压力引起的带隙收缩,最终产生了零带隙,从而提高了导电性和电磁吸收率。根据其光学特性,所研究的材料可用于各种可见光和紫外线光电设备。外部压力会增加上述过氧化物晶石的各向异性和延展性,从而影响其机械行为。本研究描述了外加压力带来的物理特性变化,并对这些变化进行了深入研究。
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Responses Toward Structural, Electrical, Optical, and Mechanical Properties of RbGeF3 Under Pressure: DFT Insights

Density functional theory is used in the current study to thoroughly examine the physical properties of perovskites made of halide RbGeF3 under a variety of hydrostatic pressure ranges between 0 and 50 GPa. This research seeks to reduce the electronic bandgap of RbGeF3 under pressure to enhance the optical properties and evaluate the compounds' decency for usage in optoelectronic and electrical uses. The precision of the structural characteristics is relatively high, and they fit well with published earlier research. A higher interaction between atoms is also a result of the large drop in lattice characteristics and link length. Pressurization reveals the ionic and covalent characteristics of the bonds between Rb-F and Ge-F, respectively. Both the conductivity and the optical absorbance vary noticeably when hydrostatic pressure is applied. A zero bandgap finally arises via pressure-induced bandgap shrinkage, improving conductivity and electromagnetic absorption. Based on their optical properties, the materials being studied could be used in a variety of visible and ultraviolet optoelectronic devices. External pressure increases the anisotropy and ductility of the aforementioned perovskites, hence influencing their mechanical behavior. This study describes the changes in physical characteristics brought on by applied stress and offers a thorough examination of those changes.

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