{"title":"部分扩展 Ge 源双栅极隧道场效应晶体管 (DG-TFET) 中电气参数的研究","authors":"Omendra Kr Singh, V. Dhandapani, Baljit Kaur","doi":"10.1007/s11664-024-10997-y","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":506265,"journal":{"name":"Journal of Electronic Materials","volume":"85 23","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of the Electrical Parameters in a Partially Extended Ge-Source Double-Gate Tunnel Field-Effect Transistor (DG-TFET)\",\"authors\":\"Omendra Kr Singh, V. Dhandapani, Baljit Kaur\",\"doi\":\"10.1007/s11664-024-10997-y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":506265,\"journal\":{\"name\":\"Journal of Electronic Materials\",\"volume\":\"85 23\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-03-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Electronic Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1007/s11664-024-10997-y\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1007/s11664-024-10997-y","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}