设计基于 Dibit 的 XOR 和 XNOR 门的替代方法

Surajit Bosu, Baibaswata Bhattacharjee
{"title":"设计基于 Dibit 的 XOR 和 XNOR 门的替代方法","authors":"Surajit Bosu, Baibaswata Bhattacharjee","doi":"10.29292/jics.v19i1.794","DOIUrl":null,"url":null,"abstract":"In this generation, high-speed communication has very demanding. In this respect, optical communication plays a crucial role in meeting the goal of high-speed communication. With the increasing demands of high-speed communication, huge data processing is also needed. Therefore, we have proposed a design of XOR and XNOR gates using five reflective semiconductor optical amplifiers (RSOA). Our proposed gates are dibit logic-based. To increase the reliability of the devise, we have incorporated this logic scheme. Here, we consider the logic state ‘0’ for the absence of pulse and logic state ‘1’ for the presence of pulse. The dibit logic ‘0 1’ and ‘1 0’ are similar as ‘0’ and ‘1’ in digtal states, respectively. To check its practical feasibility, we have simulated the proposed design in Matlabsoftware and also quality factor, contrast, and extinction ratios are calculated for this design.","PeriodicalId":39974,"journal":{"name":"Journal of Integrated Circuits and Systems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Alternative approach to design Dibit-based XOR and XNOR gate\",\"authors\":\"Surajit Bosu, Baibaswata Bhattacharjee\",\"doi\":\"10.29292/jics.v19i1.794\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this generation, high-speed communication has very demanding. In this respect, optical communication plays a crucial role in meeting the goal of high-speed communication. With the increasing demands of high-speed communication, huge data processing is also needed. Therefore, we have proposed a design of XOR and XNOR gates using five reflective semiconductor optical amplifiers (RSOA). Our proposed gates are dibit logic-based. To increase the reliability of the devise, we have incorporated this logic scheme. Here, we consider the logic state ‘0’ for the absence of pulse and logic state ‘1’ for the presence of pulse. The dibit logic ‘0 1’ and ‘1 0’ are similar as ‘0’ and ‘1’ in digtal states, respectively. To check its practical feasibility, we have simulated the proposed design in Matlabsoftware and also quality factor, contrast, and extinction ratios are calculated for this design.\",\"PeriodicalId\":39974,\"journal\":{\"name\":\"Journal of Integrated Circuits and Systems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Integrated Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.29292/jics.v19i1.794\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Integrated Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.29292/jics.v19i1.794","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0

摘要

当今时代,对高速通信的要求非常高。在这方面,光通信在实现高速通信目标方面发挥着至关重要的作用。随着对高速通信的要求越来越高,也需要大量的数据处理。因此,我们提出了一种使用五个反射半导体光放大器(RSOA)设计 XOR 和 XNOR 门的方法。我们提出的门是基于二进制逻辑的。为了提高设备的可靠性,我们采用了这种逻辑方案。在这里,我们认为逻辑状态 "0 "表示没有脉冲,逻辑状态 "1 "表示有脉冲。二进制逻辑 "0 1 "和 "1 0 "分别类似于二进制状态下的 "0 "和 "1"。为了检验其实际可行性,我们在 Matlab 软件中模拟了所提出的设计,并计算了该设计的品质因数、对比度和消光比。
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Alternative approach to design Dibit-based XOR and XNOR gate
In this generation, high-speed communication has very demanding. In this respect, optical communication plays a crucial role in meeting the goal of high-speed communication. With the increasing demands of high-speed communication, huge data processing is also needed. Therefore, we have proposed a design of XOR and XNOR gates using five reflective semiconductor optical amplifiers (RSOA). Our proposed gates are dibit logic-based. To increase the reliability of the devise, we have incorporated this logic scheme. Here, we consider the logic state ‘0’ for the absence of pulse and logic state ‘1’ for the presence of pulse. The dibit logic ‘0 1’ and ‘1 0’ are similar as ‘0’ and ‘1’ in digtal states, respectively. To check its practical feasibility, we have simulated the proposed design in Matlabsoftware and also quality factor, contrast, and extinction ratios are calculated for this design.
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来源期刊
Journal of Integrated Circuits and Systems
Journal of Integrated Circuits and Systems Engineering-Electrical and Electronic Engineering
CiteScore
0.90
自引率
0.00%
发文量
39
期刊介绍: This journal will present state-of-art papers on Integrated Circuits and Systems. It is an effort of both Brazilian Microelectronics Society - SBMicro and Brazilian Computer Society - SBC to create a new scientific journal covering Process and Materials, Device and Characterization, Design, Test and CAD of Integrated Circuits and Systems. The Journal of Integrated Circuits and Systems is published through Special Issues on subjects to be defined by the Editorial Board. Special issues will publish selected papers from both Brazilian Societies annual conferences, SBCCI - Symposium on Integrated Circuits and Systems and SBMicro - Symposium on Microelectronics Technology and Devices.
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