{"title":"利用新型 TFET 配置设计无标记生物传感器并进行性能评估","authors":"DP-Rapolu Anil Kumar, K. Sravani, K.Srinivasa Rao","doi":"10.29292/jics.v19i1.784","DOIUrl":null,"url":null,"abstract":"The present study presents an innovative idea: an original design for a label-free biosensor utilizing H-shape channel configuration within a dielectrically modulated (DM) double-gate TFET (DGTFET) framework, which includes the incorporation of a drain pocket (DP). This design concept is introduced In this study, an analytical model for the DM DPDG-TFET has been created for the first time was formulated and subsequently verified through comparison with industry-standard simulation software (Silvaco TCAD). In this paper we have examine both the biosensor's sensitivity and its effectiveness when employed as a tunnel field-effect transistor (TFET) device. A comprehensive analysis of the device's performance has been conducted. The innovative configuration of the suggested TFET results in heightened sensitivity. Incorporating a drain pocket (DP) at the junction between the drain and channel effectively eliminates ambipolarity, showcasing a successful approach. The H-shape DM DPDGTFET design demonstrates its superiority over various devices documented in the literature. The presence or lack of electric charge in various biomolecules is examined in order to evaluate the device's sensitivity as a label-free biosensor.","PeriodicalId":39974,"journal":{"name":"Journal of Integrated Circuits and Systems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and Performance Assessment of a Label- free Biosensor utilizing a Novel TFET Configuration\",\"authors\":\"DP-Rapolu Anil Kumar, K. Sravani, K.Srinivasa Rao\",\"doi\":\"10.29292/jics.v19i1.784\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The present study presents an innovative idea: an original design for a label-free biosensor utilizing H-shape channel configuration within a dielectrically modulated (DM) double-gate TFET (DGTFET) framework, which includes the incorporation of a drain pocket (DP). This design concept is introduced In this study, an analytical model for the DM DPDG-TFET has been created for the first time was formulated and subsequently verified through comparison with industry-standard simulation software (Silvaco TCAD). In this paper we have examine both the biosensor's sensitivity and its effectiveness when employed as a tunnel field-effect transistor (TFET) device. A comprehensive analysis of the device's performance has been conducted. The innovative configuration of the suggested TFET results in heightened sensitivity. Incorporating a drain pocket (DP) at the junction between the drain and channel effectively eliminates ambipolarity, showcasing a successful approach. The H-shape DM DPDGTFET design demonstrates its superiority over various devices documented in the literature. The presence or lack of electric charge in various biomolecules is examined in order to evaluate the device's sensitivity as a label-free biosensor.\",\"PeriodicalId\":39974,\"journal\":{\"name\":\"Journal of Integrated Circuits and Systems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Integrated Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.29292/jics.v19i1.784\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Integrated Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.29292/jics.v19i1.784","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
Design and Performance Assessment of a Label- free Biosensor utilizing a Novel TFET Configuration
The present study presents an innovative idea: an original design for a label-free biosensor utilizing H-shape channel configuration within a dielectrically modulated (DM) double-gate TFET (DGTFET) framework, which includes the incorporation of a drain pocket (DP). This design concept is introduced In this study, an analytical model for the DM DPDG-TFET has been created for the first time was formulated and subsequently verified through comparison with industry-standard simulation software (Silvaco TCAD). In this paper we have examine both the biosensor's sensitivity and its effectiveness when employed as a tunnel field-effect transistor (TFET) device. A comprehensive analysis of the device's performance has been conducted. The innovative configuration of the suggested TFET results in heightened sensitivity. Incorporating a drain pocket (DP) at the junction between the drain and channel effectively eliminates ambipolarity, showcasing a successful approach. The H-shape DM DPDGTFET design demonstrates its superiority over various devices documented in the literature. The presence or lack of electric charge in various biomolecules is examined in order to evaluate the device's sensitivity as a label-free biosensor.
期刊介绍:
This journal will present state-of-art papers on Integrated Circuits and Systems. It is an effort of both Brazilian Microelectronics Society - SBMicro and Brazilian Computer Society - SBC to create a new scientific journal covering Process and Materials, Device and Characterization, Design, Test and CAD of Integrated Circuits and Systems. The Journal of Integrated Circuits and Systems is published through Special Issues on subjects to be defined by the Editorial Board. Special issues will publish selected papers from both Brazilian Societies annual conferences, SBCCI - Symposium on Integrated Circuits and Systems and SBMicro - Symposium on Microelectronics Technology and Devices.