{"title":"带氧化铝层的 Al/p-si 肖特基二极管的电流-电压特性分析","authors":"Elanur Di̇ki̇ci̇oğlu, B. Polat","doi":"10.54287/gujsa.1413932","DOIUrl":null,"url":null,"abstract":"In our study, how the thin metal oxide (aluminium oxide, Al2O3) thin film placed between the metal and the semiconductor on the diode characteristics will affect was investigated. The Al2O3 thin film was suitable for its grown on p-type silicon substrate by atomic layer deposition (ALD) technique. A diode structure with an oxide interlayer was fabricated. To investigate the electrical parameters of the fabricated Schottky diode, measurements of current-voltage (I-V) were carried out at room temperature and in the 5 V voltage range. Using the I-V measurements, diode parameters such as the barrier height (Φb), the ideality factor (n), and the current density (I0) were evaluated using the Thermionic Emission (TE) method. Using the TE method, the approximate values of Φb, n, and Io parameters were calculated as 0.77 eV, 5.43, and 2.43E-09 A respectively. According to calculations, the developed Schottky diode is a rectifier diode and has been determined to have photodiode properties.","PeriodicalId":134301,"journal":{"name":"Gazi University Journal of Science Part A: Engineering and Innovation","volume":"28 16","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of Current-Voltage Properties of Al/p-si Schottky Diode with Aluminium Oxide Layer\",\"authors\":\"Elanur Di̇ki̇ci̇oğlu, B. Polat\",\"doi\":\"10.54287/gujsa.1413932\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In our study, how the thin metal oxide (aluminium oxide, Al2O3) thin film placed between the metal and the semiconductor on the diode characteristics will affect was investigated. The Al2O3 thin film was suitable for its grown on p-type silicon substrate by atomic layer deposition (ALD) technique. A diode structure with an oxide interlayer was fabricated. To investigate the electrical parameters of the fabricated Schottky diode, measurements of current-voltage (I-V) were carried out at room temperature and in the 5 V voltage range. Using the I-V measurements, diode parameters such as the barrier height (Φb), the ideality factor (n), and the current density (I0) were evaluated using the Thermionic Emission (TE) method. Using the TE method, the approximate values of Φb, n, and Io parameters were calculated as 0.77 eV, 5.43, and 2.43E-09 A respectively. According to calculations, the developed Schottky diode is a rectifier diode and has been determined to have photodiode properties.\",\"PeriodicalId\":134301,\"journal\":{\"name\":\"Gazi University Journal of Science Part A: Engineering and Innovation\",\"volume\":\"28 16\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-02-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Gazi University Journal of Science Part A: Engineering and Innovation\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.54287/gujsa.1413932\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Gazi University Journal of Science Part A: Engineering and Innovation","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.54287/gujsa.1413932","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
在我们的研究中，我们探讨了置于金属和半导体之间的金属氧化物（氧化铝，Al2O3）薄膜对二极管特性的影响。Al2O3 薄膜适合通过原子层沉积 (ALD) 技术在 p 型硅衬底上生长。制造出了带有氧化物夹层的二极管结构。为了研究制作的肖特基二极管的电气参数，在室温和 5 V 电压范围内进行了电流-电压（I-V）测量。利用 I-V 测量结果，采用热离子发射 (TE) 方法评估了二极管参数，如势垒高度 (Φb)、理想系数 (n) 和电流密度 (I0)。使用 TE 法计算出的 Φb、n 和 Io 参数近似值分别为 0.77 eV、5.43 和 2.43E-09A。根据计算结果，所开发的肖特基二极管属于整流二极管，并被确定具有光电二极管的特性。
Analysis of Current-Voltage Properties of Al/p-si Schottky Diode with Aluminium Oxide Layer
In our study, how the thin metal oxide (aluminium oxide, Al2O3) thin film placed between the metal and the semiconductor on the diode characteristics will affect was investigated. The Al2O3 thin film was suitable for its grown on p-type silicon substrate by atomic layer deposition (ALD) technique. A diode structure with an oxide interlayer was fabricated. To investigate the electrical parameters of the fabricated Schottky diode, measurements of current-voltage (I-V) were carried out at room temperature and in the 5 V voltage range. Using the I-V measurements, diode parameters such as the barrier height (Φb), the ideality factor (n), and the current density (I0) were evaluated using the Thermionic Emission (TE) method. Using the TE method, the approximate values of Φb, n, and Io parameters were calculated as 0.77 eV, 5.43, and 2.43E-09 A respectively. According to calculations, the developed Schottky diode is a rectifier diode and has been determined to have photodiode properties.
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