煅烧温度对粉尘中游离二氧化硅含量的影响研究

Lihua Dong, Ying Liu
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摘要

为了验证含硅粉尘在煅烧过程中硅氧化成二氧化硅的情况,硅粉和单晶硅在不同温度下进行了煅烧。使用傅立叶变换红外光谱(FTIR)对样品进行分析,并与二氧化硅标准的傅立叶变换红外光谱进行比较。结果表明,在 750 摄氏度煅烧的硅粉和单晶硅的傅里叶变换红外光谱中,Si-O-Si 的非对称伸缩振动、对称伸缩振动和弯曲振动吸收峰非常明显。这些吸收峰的位置与标准二氧化硅的吸收峰大致相关。由此得出结论,当煅烧温度高于 750 摄氏度时,元素硅会被不同程度地氧化成二氧化硅,这将导致在粉尘中检测到更高的二氧化硅含量。
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Research on the Influence of Calcination Temperature on the Content of Free Silicon Dioxide in Dust
In order to verify the oxidation of silicon to silicon dioxide during the calcination process of silica containing dust, silicon powder and monocrystalline silicon were calcined at different temperatures. The sample was analyzed using Fourier transform infrared spectroscopy (FTIR) and compared with the FTIR spectrum of the silica standard. The results show that the antisymmetrical stretching vibration, symmetrical stretching vibration and bending vibration absorption peak of Si-O-Si were obviously in the FTIR spectra of silicon powder and monocrystalline silicon calcined at 750oC. The positions of those absorption peaks correlate broadly with the absorption peaks of standard silica. It is concluded that when the calcination temperature was above 750oC, elemental silicon would be oxidized to silica at different levels, which would cause a higher silica content detected in dust.
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