针对 D 波段应用的 CMOS 技术宽带片上天线阵列设计

Ming-An Chung, Shang-Jui Huang, Yu-Hsun Chen
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引用次数: 0

摘要

我们提出了一种在 D 波段工作的贴片阵列天线,采用台积电 180 纳米 CMOS 工艺。天线结构采用顶部金属层(Metal6)作为贴片天线,底部金属层(Metall)作为接地。仿真结果表明,片上贴片天线在 141 GHz 时的峰值增益为 - 5.95 dBi。对拟议天线的测量显示,其带宽为 140 GHz 至 202.5 GHz。所提出的阵列片上贴片天线可用于智能城市技术和汽车应用。
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Broadband On-Chip Antenna Array Design in CMOS Technology for D-Band Application
A patch array antenna working in the D-band is proposed in TSMC's 180 nm CMOS. The antenna structure applies a top metal layer (Metal6) as the patch antenna and a bottom metal layer (Metall) for the ground. Simulation results demonstrate that the on-chip patch antenna has a peak gain of - 5.95 dBi at 141 GHz. The measurement of the proposed antenna demonstrates bandwidth from 140 GHz to 202.5 GHz. The array on-chip patch antenna proposed can use in Smart cities technology and automotive applications.
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