Moise Safari Mugisho, C. Friesicke, M. Ayad, T. Maier, Rüdiger Quay
{"title":"谐波注入 Doherty 功率放大器：优势与局限","authors":"Moise Safari Mugisho, C. Friesicke, M. Ayad, T. Maier, Rüdiger Quay","doi":"10.1109/PAWR59907.2024.10438621","DOIUrl":null,"url":null,"abstract":"This paper presents an investigation into the effects of second harmonic ($2f_{0}$) power injection on the performance of a Doherty power amplifier (DPA). This investigation is conducted through the implementation of a single-stage 24 GHz harmonic-injection DPA (HI-DPA) manufactured on a 100 nm Gallium Nitride (GaN) technology. An on-chip injection power amplifier (IPA) operating at 48 GHz is used to generate the injected $2f_{0}$ power. On-wafer continuous wave measurements demonstrate that at 24 GHz, the HI-DPA achieves a power added efficiency (PAE) of 37% and 32.5% at a peak output power (POP) of 32.5dBm and 6 dB output power back-off (OPBO), respectively. When compared to a conventional DPA (CDPA) designed and manufactured under similar operating conditions, the HI-DPA exhibits an improved AM/PM characteristics with a 3.3% and 6% higher PAE at POP and OPBO at a cost of 1 dB small-signal gain penalty.","PeriodicalId":518963,"journal":{"name":"2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"79 4","pages":"35-38"},"PeriodicalIF":0.0000,"publicationDate":"2024-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Harmonic-Injection Doherty Power Amplifier: Benefits and Limitations\",\"authors\":\"Moise Safari Mugisho, C. Friesicke, M. Ayad, T. Maier, Rüdiger Quay\",\"doi\":\"10.1109/PAWR59907.2024.10438621\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents an investigation into the effects of second harmonic ($2f_{0}$) power injection on the performance of a Doherty power amplifier (DPA). This investigation is conducted through the implementation of a single-stage 24 GHz harmonic-injection DPA (HI-DPA) manufactured on a 100 nm Gallium Nitride (GaN) technology. An on-chip injection power amplifier (IPA) operating at 48 GHz is used to generate the injected $2f_{0}$ power. On-wafer continuous wave measurements demonstrate that at 24 GHz, the HI-DPA achieves a power added efficiency (PAE) of 37% and 32.5% at a peak output power (POP) of 32.5dBm and 6 dB output power back-off (OPBO), respectively. When compared to a conventional DPA (CDPA) designed and manufactured under similar operating conditions, the HI-DPA exhibits an improved AM/PM characteristics with a 3.3% and 6% higher PAE at POP and OPBO at a cost of 1 dB small-signal gain penalty.\",\"PeriodicalId\":518963,\"journal\":{\"name\":\"2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)\",\"volume\":\"79 4\",\"pages\":\"35-38\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-01-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PAWR59907.2024.10438621\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PAWR59907.2024.10438621","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Harmonic-Injection Doherty Power Amplifier: Benefits and Limitations
This paper presents an investigation into the effects of second harmonic ($2f_{0}$) power injection on the performance of a Doherty power amplifier (DPA). This investigation is conducted through the implementation of a single-stage 24 GHz harmonic-injection DPA (HI-DPA) manufactured on a 100 nm Gallium Nitride (GaN) technology. An on-chip injection power amplifier (IPA) operating at 48 GHz is used to generate the injected $2f_{0}$ power. On-wafer continuous wave measurements demonstrate that at 24 GHz, the HI-DPA achieves a power added efficiency (PAE) of 37% and 32.5% at a peak output power (POP) of 32.5dBm and 6 dB output power back-off (OPBO), respectively. When compared to a conventional DPA (CDPA) designed and manufactured under similar operating conditions, the HI-DPA exhibits an improved AM/PM characteristics with a 3.3% and 6% higher PAE at POP and OPBO at a cost of 1 dB small-signal gain penalty.
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