Pub Date : 2024-01-21DOI: 10.1109/pawr59907.2024.10438496
{"title":"PAWR 2024 Welcome Messages","authors":"","doi":"10.1109/pawr59907.2024.10438496","DOIUrl":"https://doi.org/10.1109/pawr59907.2024.10438496","url":null,"abstract":"","PeriodicalId":518963,"journal":{"name":"2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"5 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140531327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-21DOI: 10.1109/PAWR59907.2024.10438618
Sravya Alluri, Vincent Leung, Peter Asbeck
Power amplifiers at 13 GHz are attracting attention for possible use in 6G wireless systems, and the comparison between different transistor technologies that could be applied is an emerging research focus. Relative to 5G mm-wave power amplifiers, higher output power (up to 30-35 dBm), high efficiency and high linearity are important requirements for 6G. This paper focuses on design considerations for high power CMOS-SOI technology at 13 GHz, including scaling issues relative to the well-studied 28GHz designs. A single-stage, single-ended pMOS amplifier is reported which achieves Psat=27 dBm and peak PAE=43%, in a small area (0.33 mm2 excluding pads). These are believed to be the highest reported results for CMOS, although this band has received relatively little attention to date.
{"title":"A compact 27 dBm triple-stack power amplifier for 13 GHz operation in CMOS-SOI","authors":"Sravya Alluri, Vincent Leung, Peter Asbeck","doi":"10.1109/PAWR59907.2024.10438618","DOIUrl":"https://doi.org/10.1109/PAWR59907.2024.10438618","url":null,"abstract":"Power amplifiers at 13 GHz are attracting attention for possible use in 6G wireless systems, and the comparison between different transistor technologies that could be applied is an emerging research focus. Relative to 5G mm-wave power amplifiers, higher output power (up to 30-35 dBm), high efficiency and high linearity are important requirements for 6G. This paper focuses on design considerations for high power CMOS-SOI technology at 13 GHz, including scaling issues relative to the well-studied 28GHz designs. A single-stage, single-ended pMOS amplifier is reported which achieves Psat=27 dBm and peak PAE=43%, in a small area (0.33 mm2 excluding pads). These are believed to be the highest reported results for CMOS, although this band has received relatively little attention to date.","PeriodicalId":518963,"journal":{"name":"2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"76 1","pages":"13-16"},"PeriodicalIF":0.0,"publicationDate":"2024-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140531450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-21DOI: 10.1109/pawr59907.2024.10438553
{"title":"PAWR 2024 Cover Page","authors":"","doi":"10.1109/pawr59907.2024.10438553","DOIUrl":"https://doi.org/10.1109/pawr59907.2024.10438553","url":null,"abstract":"","PeriodicalId":518963,"journal":{"name":"2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"173 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140531055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-21DOI: 10.1109/PAWR59907.2024.10438512
Sunwoo Lee, Byeongcheol Yoon, Jooyoung Jeon, Junghyun Kim
This study presents the design and fabrication of a concurrent 2.45/5.8 GHz dual-band power amplifier (PA) with a dual-band matching method for optimized performance. The proposed matching method simultaneously utilizes series and parallel resonance to transform the frequency-dependent fundamental complex optimum load impedance to $50 Omega$ at two arbitrary frequencies. Additionally, the selectable range of a low-frequency is analyzed when a high-frequency is selected. The dual-band PA was designed and fabricated on the Rogers 5880 substrate, utilizing the Wolfspeed GaN HEMT CGH40006s. Measurement results indicate that the implemented dual-band PA achieves a small signal gain of 13.9 dB at 2.45 GHz and 10.6 dB at 5.8 GHz. Furthermore, at the 3 dB compression point, the output power (OP$_{3dB})$ is measured at 38.4 dBm for 2.45 GHz and 38.6 dBm for 5.8 GHz, while the corresponding drain efficiency (DE$_{3dB})$ is 71 % at 2.45 GHz and 59.6 % at 5.8 GHz. OP$_{3dB}$ and DE$_{3dB}$frequency responses of the dual-band PA were above 38 dBm and 70 % between 2.4 GHz and 2.5 GHz, and over 38 dBm and 55 % from 5.7 GHz to 5.9 GHz, respectively.
{"title":"A Concurrent 2.45/5.8 GHz Power Amplifier with an Optimal Dual-band Matching Method","authors":"Sunwoo Lee, Byeongcheol Yoon, Jooyoung Jeon, Junghyun Kim","doi":"10.1109/PAWR59907.2024.10438512","DOIUrl":"https://doi.org/10.1109/PAWR59907.2024.10438512","url":null,"abstract":"This study presents the design and fabrication of a concurrent 2.45/5.8 GHz dual-band power amplifier (PA) with a dual-band matching method for optimized performance. The proposed matching method simultaneously utilizes series and parallel resonance to transform the frequency-dependent fundamental complex optimum load impedance to $50 Omega$ at two arbitrary frequencies. Additionally, the selectable range of a low-frequency is analyzed when a high-frequency is selected. The dual-band PA was designed and fabricated on the Rogers 5880 substrate, utilizing the Wolfspeed GaN HEMT CGH40006s. Measurement results indicate that the implemented dual-band PA achieves a small signal gain of 13.9 dB at 2.45 GHz and 10.6 dB at 5.8 GHz. Furthermore, at the 3 dB compression point, the output power (OP$_{3dB})$ is measured at 38.4 dBm for 2.45 GHz and 38.6 dBm for 5.8 GHz, while the corresponding drain efficiency (DE$_{3dB})$ is 71 % at 2.45 GHz and 59.6 % at 5.8 GHz. OP$_{3dB}$ and DE$_{3dB}$frequency responses of the dual-band PA were above 38 dBm and 70 % between 2.4 GHz and 2.5 GHz, and over 38 dBm and 55 % from 5.7 GHz to 5.9 GHz, respectively.","PeriodicalId":518963,"journal":{"name":"2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"48 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2024-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140531487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-21DOI: 10.1109/PAWR59907.2024.10438621
Moise Safari Mugisho, C. Friesicke, M. Ayad, T. Maier, Rüdiger Quay
This paper presents an investigation into the effects of second harmonic ($2f_{0}$) power injection on the performance of a Doherty power amplifier (DPA). This investigation is conducted through the implementation of a single-stage 24 GHz harmonic-injection DPA (HI-DPA) manufactured on a 100 nm Gallium Nitride (GaN) technology. An on-chip injection power amplifier (IPA) operating at 48 GHz is used to generate the injected $2f_{0}$ power. On-wafer continuous wave measurements demonstrate that at 24 GHz, the HI-DPA achieves a power added efficiency (PAE) of 37% and 32.5% at a peak output power (POP) of 32.5dBm and 6 dB output power back-off (OPBO), respectively. When compared to a conventional DPA (CDPA) designed and manufactured under similar operating conditions, the HI-DPA exhibits an improved AM/PM characteristics with a 3.3% and 6% higher PAE at POP and OPBO at a cost of 1 dB small-signal gain penalty.
{"title":"Harmonic-Injection Doherty Power Amplifier: Benefits and Limitations","authors":"Moise Safari Mugisho, C. Friesicke, M. Ayad, T. Maier, Rüdiger Quay","doi":"10.1109/PAWR59907.2024.10438621","DOIUrl":"https://doi.org/10.1109/PAWR59907.2024.10438621","url":null,"abstract":"This paper presents an investigation into the effects of second harmonic ($2f_{0}$) power injection on the performance of a Doherty power amplifier (DPA). This investigation is conducted through the implementation of a single-stage 24 GHz harmonic-injection DPA (HI-DPA) manufactured on a 100 nm Gallium Nitride (GaN) technology. An on-chip injection power amplifier (IPA) operating at 48 GHz is used to generate the injected $2f_{0}$ power. On-wafer continuous wave measurements demonstrate that at 24 GHz, the HI-DPA achieves a power added efficiency (PAE) of 37% and 32.5% at a peak output power (POP) of 32.5dBm and 6 dB output power back-off (OPBO), respectively. When compared to a conventional DPA (CDPA) designed and manufactured under similar operating conditions, the HI-DPA exhibits an improved AM/PM characteristics with a 3.3% and 6% higher PAE at POP and OPBO at a cost of 1 dB small-signal gain penalty.","PeriodicalId":518963,"journal":{"name":"2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"79 4","pages":"35-38"},"PeriodicalIF":0.0,"publicationDate":"2024-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140531449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-21DOI: 10.1109/pawr59907.2024.10438594
{"title":"PAWR 2024 TOC","authors":"","doi":"10.1109/pawr59907.2024.10438594","DOIUrl":"https://doi.org/10.1109/pawr59907.2024.10438594","url":null,"abstract":"","PeriodicalId":518963,"journal":{"name":"2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"66 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140531458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-21DOI: 10.1109/PAWR59907.2024.10438610
Paul Flaten, Z. Popović
This paper presents the design and measured results of a GaN MMIC single-stage power amplifier (PA) with a broadband non-uniform microstrip line output matching network that results in 40% fractional bandwidth centered roughly at 20 GHz with a gain >8 dB. The synthesis of the non-uniform transmission line (NTL) and its integration with the PA bias line are discussed. A meandering technique is implemented to miniaturize the NTL footprint on the MMIC. Measurements agree well with simulations, showing >8 dB small-signal gain from 16 – 26 GHz for this single-ended single-stage PA.
{"title":"Broadband GaN Power Amplifier MMIC with a Nonuniform Transmission Line Output Network","authors":"Paul Flaten, Z. Popović","doi":"10.1109/PAWR59907.2024.10438610","DOIUrl":"https://doi.org/10.1109/PAWR59907.2024.10438610","url":null,"abstract":"This paper presents the design and measured results of a GaN MMIC single-stage power amplifier (PA) with a broadband non-uniform microstrip line output matching network that results in 40% fractional bandwidth centered roughly at 20 GHz with a gain >8 dB. The synthesis of the non-uniform transmission line (NTL) and its integration with the PA bias line are discussed. A meandering technique is implemented to miniaturize the NTL footprint on the MMIC. Measurements agree well with simulations, showing >8 dB small-signal gain from 16 – 26 GHz for this single-ended single-stage PA.","PeriodicalId":518963,"journal":{"name":"2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"128 3","pages":"70-73"},"PeriodicalIF":0.0,"publicationDate":"2024-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140531066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-21DOI: 10.1109/PAWR59907.2024.10438584
Roberto Quaglia, Steve C. Cripps, Jeffrey R. Powell
This paper presents a study on the settling time of the impedance loading the high frequency transistors in power amplifiers. Depending on the matching network type and complexity, the impedance can take significant time for settling. This will affect the ability of the power amplifier to respond to fast changing modulation signals or fast, short RF pulses, hence becoming a limiting factor for emerging wireless systems, alongside other effects such as bias networks and thermal response. The study is based on fitting the frequency domain response with a rational function, allowing the application of a sinewave stimulus starting at t =0 for evaluating the transient behavior. The results show that the settling time is not easily relatable to parameters usually considered such as the group delay, hence suggesting that full understanding of these effects will need deeper studies.
本文研究了功率放大器中加载高频晶体管的阻抗的稳定时间。根据匹配网络的类型和复杂程度，阻抗可能需要相当长的沉淀时间。这将影响功率放大器对快速变化的调制信号或快速、短射频脉冲的响应能力，从而与偏置网络和热响应等其他影响一起成为新兴无线系统的限制因素。这项研究以有理函数拟合频域响应为基础，允许应用从 t =0 开始的正弦波刺激来评估瞬态行为。结果表明，沉降时间与通常考虑的参数（如群延迟）并不容易联系起来，因此表明要全面了解这些效应还需要更深入的研究。
{"title":"Impact of Matching Networks on the Impedance Settling Time in High Frequency Power Amplifiers","authors":"Roberto Quaglia, Steve C. Cripps, Jeffrey R. Powell","doi":"10.1109/PAWR59907.2024.10438584","DOIUrl":"https://doi.org/10.1109/PAWR59907.2024.10438584","url":null,"abstract":"This paper presents a study on the settling time of the impedance loading the high frequency transistors in power amplifiers. Depending on the matching network type and complexity, the impedance can take significant time for settling. This will affect the ability of the power amplifier to respond to fast changing modulation signals or fast, short RF pulses, hence becoming a limiting factor for emerging wireless systems, alongside other effects such as bias networks and thermal response. The study is based on fitting the frequency domain response with a rational function, allowing the application of a sinewave stimulus starting at t =0 for evaluating the transient behavior. The results show that the settling time is not easily relatable to parameters usually considered such as the group delay, hence suggesting that full understanding of these effects will need deeper studies.","PeriodicalId":518963,"journal":{"name":"2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"108 1","pages":"28-30"},"PeriodicalIF":0.0,"publicationDate":"2024-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140531057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：