A compact 27 dBm triple-stack power amplifier for 13 GHz operation in CMOS-SOI

Power amplifiers at 13 GHz are attracting attention for possible use in 6G wireless systems, and the comparison between different transistor technologies that could be applied is an emerging research focus. Relative to 5G mm-wave power amplifiers, higher output power (up to 30-35 dBm), high efficiency and high linearity are important requirements for 6G. This paper focuses on design considerations for high power CMOS-SOI technology at 13 GHz, including scaling issues relative to the well-studied 28GHz designs. A single-stage, single-ended pMOS amplifier is reported which achieves Psat=27 dBm and peak PAE=43%, in a small area (0.33 mm2 excluding pads). These are believed to be the highest reported results for CMOS, although this band has received relatively little attention to date.