Damascene versus subtractive line CMP process for resistive memory crossbars BEOL integration

In recent years, resistive memories have emerged as a pivotal advancement in the realm of electronics, offering numerous advantages in terms of energy efficiency, scalability, and non-volatility [1]. Characterized by their unique resistive switching behavior, these memories are well-suited for a variety of applications, ranging from high-density data storage to neuromorphic computing [2]. Their potential is further enhanced by their compatibility with advanced semiconductor processes, enabling seamless integration into modern electronic circuits [3]. A particularly promising avenue for resistive memory lies in its integration at the Back-End-of-Line (BEOL) stage of semiconductor manufacturing [4]. BEOL integration involves processes that occur after the fabrication of the transistors, primarily focusing on creating interconnections that electrically link these transistors. Integrating resistive memories at this stage can lead to compact, efficient, and high-performance architectures, pivotal for in-memory computing applications where data storage and processing are co-located [5]. This paper studies three ways to integrate TiO_x-based resistive memory into passive crossbar array structures, using chemical mechanical polishing (CMP) processes, focusing on identifying the optimal integration techniques.