设计和验证用于 MMC 的新型半导体面积优化 3300 V SiC 半桥

IF 16.4 1区化学 Q1 CHEMISTRY, MULTIDISCIPLINARY Accounts of Chemical Research Pub Date : 2024-04-05 DOI:10.1049/pel2.12693

Lukas Bergmann, Mark-M. Bakran

{"title":"设计和验证用于 MMC 的新型半导体面积优化 3300 V SiC 半桥","authors":"Lukas Bergmann, Mark-M. Bakran","doi":"10.1049/pel2.12693","DOIUrl":null,"url":null,"abstract":"<p>This article presents the design and experimental validation of a novel semiconductor area optimised 3300 V half bridge with Silicon Carbide (SiC) MOSFETs for HVDC converters. Based on a loss simulation, the problem statement is provided. On this results, a mathematical derivation for the optimised semiconductor area design is executed. After this step, a system loss simulation shows the performance in efficiency and specific output power. Finally, a proof of concept was provided by a scaled hardware test setup to characterise the dynamic behaviour of the novel SiC half bridge design compared to the conventional SiC half bridge.</p>","PeriodicalId":1,"journal":{"name":"Accounts of Chemical Research","volume":null,"pages":null},"PeriodicalIF":16.4000,"publicationDate":"2024-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/pel2.12693","citationCount":"0","resultStr":"{\"title\":\"Design and validation of a novel semiconductor area optimised 3300 V SiC half bridge for MMC\",\"authors\":\"Lukas Bergmann, Mark-M. Bakran\",\"doi\":\"10.1049/pel2.12693\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>This article presents the design and experimental validation of a novel semiconductor area optimised 3300 V half bridge with Silicon Carbide (SiC) MOSFETs for HVDC converters. Based on a loss simulation, the problem statement is provided. On this results, a mathematical derivation for the optimised semiconductor area design is executed. After this step, a system loss simulation shows the performance in efficiency and specific output power. Finally, a proof of concept was provided by a scaled hardware test setup to characterise the dynamic behaviour of the novel SiC half bridge design compared to the conventional SiC half bridge.</p>\",\"PeriodicalId\":1,\"journal\":{\"name\":\"Accounts of Chemical Research\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":16.4000,\"publicationDate\":\"2024-04-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1049/pel2.12693\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Accounts of Chemical Research\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1049/pel2.12693\",\"RegionNum\":1,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of Chemical Research","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1049/pel2.12693","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

本文介绍了用于高压直流转换器的新型半导体面积优化 3300 V 半桥（采用碳化硅 (SiC) MOSFET）的设计和实验验证。在损耗模拟的基础上，提供了问题陈述。根据这一结果，对优化的半导体面积设计进行了数学推导。之后，系统损耗模拟显示了效率和比输出功率的性能。最后，通过一个按比例放大的硬件测试装置进行概念验证，以确定新型碳化硅半桥设计与传统碳化硅半桥相比的动态特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design and validation of a novel semiconductor area optimised 3300 V SiC half bridge for MMC

This article presents the design and experimental validation of a novel semiconductor area optimised 3300 V half bridge with Silicon Carbide (SiC) MOSFETs for HVDC converters. Based on a loss simulation, the problem statement is provided. On this results, a mathematical derivation for the optimised semiconductor area design is executed. After this step, a system loss simulation shows the performance in efficiency and specific output power. Finally, a proof of concept was provided by a scaled hardware test setup to characterise the dynamic behaviour of the novel SiC half bridge design compared to the conventional SiC half bridge.

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来源期刊

Accounts of Chemical Research 化学-化学综合

CiteScore

31.40

自引率

1.10%

发文量

312

审稿时长

2 months

期刊介绍： Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance. Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.