设计和验证用于 MMC 的新型半导体面积优化 3300 V SiC 半桥

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC IET Power Electronics Pub Date : 2024-04-05 DOI:10.1049/pel2.12693

Lukas Bergmann, Mark-M. Bakran

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引用次数: 0

摘要

本文介绍了用于高压直流转换器的新型半导体面积优化 3300 V 半桥（采用碳化硅 (SiC) MOSFET）的设计和实验验证。在损耗模拟的基础上，提供了问题陈述。根据这一结果，对优化的半导体面积设计进行了数学推导。之后，系统损耗模拟显示了效率和比输出功率的性能。最后，通过一个按比例放大的硬件测试装置进行概念验证，以确定新型碳化硅半桥设计与传统碳化硅半桥相比的动态特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design and validation of a novel semiconductor area optimised 3300 V SiC half bridge for MMC

This article presents the design and experimental validation of a novel semiconductor area optimised 3300 V half bridge with Silicon Carbide (SiC) MOSFETs for HVDC converters. Based on a loss simulation, the problem statement is provided. On this results, a mathematical derivation for the optimised semiconductor area design is executed. After this step, a system loss simulation shows the performance in efficiency and specific output power. Finally, a proof of concept was provided by a scaled hardware test setup to characterise the dynamic behaviour of the novel SiC half bridge design compared to the conventional SiC half bridge.

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来源期刊

IET Power Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

5.50

自引率

10.00%

发文量

195

审稿时长

5.1 months

期刊介绍： IET Power Electronics aims to attract original research papers, short communications, review articles and power electronics related educational studies. The scope covers applications and technologies in the field of power electronics with special focus on cost-effective, efficient, power dense, environmental friendly and robust solutions, which includes: Applications: Electric drives/generators, renewable energy, industrial and consumable applications (including lighting, welding, heating, sub-sea applications, drilling and others), medical and military apparatus, utility applications, transport and space application, energy harvesting, telecommunications, energy storage management systems, home appliances. Technologies: Circuits: all type of converter topologies for low and high power applications including but not limited to: inverter, rectifier, dc/dc converter, power supplies, UPS, ac/ac converter, resonant converter, high frequency converter, hybrid converter, multilevel converter, power factor correction circuits and other advanced topologies. Components and Materials: switching devices and their control, inductors, sensors, transformers, capacitors, resistors, thermal management, filters, fuses and protection elements and other novel low-cost efficient components/materials. Control: techniques for controlling, analysing, modelling and/or simulation of power electronics circuits and complete power electronics systems. Design/Manufacturing/Testing: new multi-domain modelling, assembling and packaging technologies, advanced testing techniques. Environmental Impact: Electromagnetic Interference (EMI) reduction techniques, Electromagnetic Compatibility (EMC), limiting acoustic noise and vibration, recycling techniques, use of non-rare material. Education: teaching methods, programme and course design, use of technology in power electronics teaching, virtual laboratory and e-learning and fields within the scope of interest. Special Issues. Current Call for papers: Harmonic Mitigation Techniques and Grid Robustness in Power Electronic-Based Power Systems - https://digital-library.theiet.org/files/IET_PEL_CFP_HMTGRPEPS.pdf