Weimin Dong , Jun Jiang , Qianwen Peng , Chengao Liu , Deliang Chu , Biwen Duan , Henghao Feng , Jin Yang , Wei Guo , Jincheng Kong , Jun Zhao
{"title":"LEC-GaSb 单晶中的面效应研究","authors":"Weimin Dong , Jun Jiang , Qianwen Peng , Chengao Liu , Deliang Chu , Biwen Duan , Henghao Feng , Jin Yang , Wei Guo , Jincheng Kong , Jun Zhao","doi":"10.1016/j.jcrysgro.2024.127706","DOIUrl":null,"url":null,"abstract":"<div><p>The “facet effect” had an important impact on the growth and quality of III-V semiconductor crystals. Herein, Te-doped 〈1<!--> <!-->1<!--> <!-->1〉 and 〈1<!--> <!-->0<!--> <!-->0〉 GaSb single crystals were grown by the liquid-encapsulated Czochralski (LEC) method. The theoretical causes of the central facets of 〈1<!--> <!-->1<!--> <!-->1〉 GaSb and the edge facets of 〈1<!--> <!-->0<!--> <!-->0〉 GaSb were studied in detail. The Te component segregation, electrical parameter changes, infrared transmittance differences, and epitaxial film defects caused by the “facet effect” were comprehensively analyzed. The influence of the shoulder angle on the edge facets of 〈1<!--> <!-->0<!--> <!-->0〉 GaSb and the size differences of edge facets between the Ga-face and Sb-face were studied.</p></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":null,"pages":null},"PeriodicalIF":1.7000,"publicationDate":"2024-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study on the facet effect in LEC-GaSb single crystals\",\"authors\":\"Weimin Dong , Jun Jiang , Qianwen Peng , Chengao Liu , Deliang Chu , Biwen Duan , Henghao Feng , Jin Yang , Wei Guo , Jincheng Kong , Jun Zhao\",\"doi\":\"10.1016/j.jcrysgro.2024.127706\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The “facet effect” had an important impact on the growth and quality of III-V semiconductor crystals. Herein, Te-doped 〈1<!--> <!-->1<!--> <!-->1〉 and 〈1<!--> <!-->0<!--> <!-->0〉 GaSb single crystals were grown by the liquid-encapsulated Czochralski (LEC) method. The theoretical causes of the central facets of 〈1<!--> <!-->1<!--> <!-->1〉 GaSb and the edge facets of 〈1<!--> <!-->0<!--> <!-->0〉 GaSb were studied in detail. The Te component segregation, electrical parameter changes, infrared transmittance differences, and epitaxial film defects caused by the “facet effect” were comprehensively analyzed. The influence of the shoulder angle on the edge facets of 〈1<!--> <!-->0<!--> <!-->0〉 GaSb and the size differences of edge facets between the Ga-face and Sb-face were studied.</p></div>\",\"PeriodicalId\":353,\"journal\":{\"name\":\"Journal of Crystal Growth\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.7000,\"publicationDate\":\"2024-04-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Crystal Growth\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0022024824001416\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024824001416","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
Study on the facet effect in LEC-GaSb single crystals
The “facet effect” had an important impact on the growth and quality of III-V semiconductor crystals. Herein, Te-doped 〈1 1 1〉 and 〈1 0 0〉 GaSb single crystals were grown by the liquid-encapsulated Czochralski (LEC) method. The theoretical causes of the central facets of 〈1 1 1〉 GaSb and the edge facets of 〈1 0 0〉 GaSb were studied in detail. The Te component segregation, electrical parameter changes, infrared transmittance differences, and epitaxial film defects caused by the “facet effect” were comprehensively analyzed. The influence of the shoulder angle on the edge facets of 〈1 0 0〉 GaSb and the size differences of edge facets between the Ga-face and Sb-face were studied.
期刊介绍：
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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