西门子还原炉中影响多晶硅棒温度均匀性的传热机制研究

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY Journal of Crystal Growth Pub Date : 2024-04-08 DOI:10.1016/j.jcrysgro.2024.127693
Wei Si , Ning Wang , Yuan Zong , Gance Dai , Ling Zhao , Zhong Xin , Guangjing Jiang
{"title":"西门子还原炉中影响多晶硅棒温度均匀性的传热机制研究","authors":"Wei Si ,&nbsp;Ning Wang ,&nbsp;Yuan Zong ,&nbsp;Gance Dai ,&nbsp;Ling Zhao ,&nbsp;Zhong Xin ,&nbsp;Guangjing Jiang","doi":"10.1016/j.jcrysgro.2024.127693","DOIUrl":null,"url":null,"abstract":"<div><p>The temperature homogeneity at polysilicon rods significantly affects the uniformity growth of the polysilicon rod and the product quality in reduction furnace. The heat transfer phenomena on the rod surface includes electric heating, radiation heat transfer, convection heat transfer, heat conduction and reaction heat. In this paper, a representative configuration (RC) of heat transfer model was selected from a “honeycomb” industrial furnace. The flow patterns with different outlets have been numerically investigated and the dependency of surface temperature distribution on the inlet velocity as well as the geometric parameters has been investigated. <span><math><mrow><mi>Gr</mi><mo>/</mo><msubsup><mrow><mi>Re</mi></mrow><mrow><mi>d</mi></mrow><mn>2</mn></msubsup></mrow></math></span> = 100 is set as the transition point determining the natural convection and mixed convection heat transfer. The results indicated that the axial temperature difference at the rod surface has close relationship with the complicated convection heat transfer. With rods growth, the main difference of local heat loss is caused by radiation rather than convection heat transfer.</p></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":null,"pages":null},"PeriodicalIF":1.7000,"publicationDate":"2024-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of heat transfer mechanism affecting temperature homogeneity at polysilicon rods in a Siemens reduction furnace\",\"authors\":\"Wei Si ,&nbsp;Ning Wang ,&nbsp;Yuan Zong ,&nbsp;Gance Dai ,&nbsp;Ling Zhao ,&nbsp;Zhong Xin ,&nbsp;Guangjing Jiang\",\"doi\":\"10.1016/j.jcrysgro.2024.127693\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The temperature homogeneity at polysilicon rods significantly affects the uniformity growth of the polysilicon rod and the product quality in reduction furnace. The heat transfer phenomena on the rod surface includes electric heating, radiation heat transfer, convection heat transfer, heat conduction and reaction heat. In this paper, a representative configuration (RC) of heat transfer model was selected from a “honeycomb” industrial furnace. The flow patterns with different outlets have been numerically investigated and the dependency of surface temperature distribution on the inlet velocity as well as the geometric parameters has been investigated. <span><math><mrow><mi>Gr</mi><mo>/</mo><msubsup><mrow><mi>Re</mi></mrow><mrow><mi>d</mi></mrow><mn>2</mn></msubsup></mrow></math></span> = 100 is set as the transition point determining the natural convection and mixed convection heat transfer. The results indicated that the axial temperature difference at the rod surface has close relationship with the complicated convection heat transfer. With rods growth, the main difference of local heat loss is caused by radiation rather than convection heat transfer.</p></div>\",\"PeriodicalId\":353,\"journal\":{\"name\":\"Journal of Crystal Growth\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.7000,\"publicationDate\":\"2024-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Crystal Growth\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0022024824001283\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024824001283","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0

摘要

多晶硅棒的温度均匀性对多晶硅棒的均匀生长和还原炉中的产品质量有很大影响。多晶硅棒表面的传热现象包括电加热、辐射传热、对流传热、热传导和反应热。本文从 "蜂窝 "工业炉中选取了一个具有代表性的传热模型配置(RC)。对不同出口的流动模式进行了数值研究,并探讨了表面温度分布与入口速度和几何参数的关系。Gr/Red2 = 100 被设定为决定自然对流和混合对流传热的过渡点。结果表明,棒表面的轴向温差与复杂对流传热关系密切。随着棒材的增长,局部热量损失的主要差异是由辐射而不是对流传热造成的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Investigation of heat transfer mechanism affecting temperature homogeneity at polysilicon rods in a Siemens reduction furnace

The temperature homogeneity at polysilicon rods significantly affects the uniformity growth of the polysilicon rod and the product quality in reduction furnace. The heat transfer phenomena on the rod surface includes electric heating, radiation heat transfer, convection heat transfer, heat conduction and reaction heat. In this paper, a representative configuration (RC) of heat transfer model was selected from a “honeycomb” industrial furnace. The flow patterns with different outlets have been numerically investigated and the dependency of surface temperature distribution on the inlet velocity as well as the geometric parameters has been investigated. Gr/Red2 = 100 is set as the transition point determining the natural convection and mixed convection heat transfer. The results indicated that the axial temperature difference at the rod surface has close relationship with the complicated convection heat transfer. With rods growth, the main difference of local heat loss is caused by radiation rather than convection heat transfer.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
期刊最新文献
Effects of TMAl pulsed supply on structural and electrical characteristics of nonpolar n-AlGaN films Synthesis and properties of quasi-one-dimensional BiSBr crystals via the Bridgman-Stockbarger technique Growth and photoelectrical properties of CsPbBr3-xIx (0 ≤ x < 1) single crystals Stoichiometry crystallographic phase analysis and crystallinity integration of silver nanoparticles: A Rietveld refinement study Influence of ferrocene doping on bridgman grown benzimidazole single crystals for third harmonic generation applications
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1