用于高温应用的立方包晶 RbTaO3 的应力诱导转变:一种 DFT 方法

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2024-04-25 DOI:10.1007/s10825-024-02166-5
Muhammad Riaz, Bakhat Ali, Syed Mansoor Ali, M. Ijaz Khan, M. Sana Ullah Sahar, Mubeen Shahid, Manawwer Alam
{"title":"用于高温应用的立方包晶 RbTaO3 的应力诱导转变:一种 DFT 方法","authors":"Muhammad Riaz,&nbsp;Bakhat Ali,&nbsp;Syed Mansoor Ali,&nbsp;M. Ijaz Khan,&nbsp;M. Sana Ullah Sahar,&nbsp;Mubeen Shahid,&nbsp;Manawwer Alam","doi":"10.1007/s10825-024-02166-5","DOIUrl":null,"url":null,"abstract":"<div><p>Oxide perovskites (ABO<sub>3</sub>) have fascinated researchers due to their potential applications in diverse fields because of their flexible chemistry and favourable characteristics including tunable band gap, high carrier mobility, and excellent optical properties. Here, a DFT-based study was conducted on RbTaO<sub>3,</sub> delved into the material behaviour under varying stress ranging from 0 to 100 GPa, emphasizing its potential for advanced applications. Key findings include a reduction in the lattice parameter from 4.2084 to 3.8149 Å, and volume from 74.5334 to 55.5200 Å<sup>3</sup>, along with a band gap narrowing from 1.574 to 1.490 eV. Additionally, DOS analysis gives an understanding of the electronic transitions involving Rb-5<i>s</i>, Ta-5<i>d</i>, and O-2<i>p</i> states. Optically, the material showed high absorption, conductivity, and lower loss function. The mechanical stability is confirmed by Born stability criteria through elastic constants (<i>C</i><sub>11</sub>, <i>C</i><sub>12</sub>, and <i>C</i><sub>44</sub>). Further assessments using Poisson’s ratio, Pugh’s ratio (<i>B</i>/<i>G</i>), Frantsevich ratio, Cauchy pressure (<i>C</i><sub>P</sub>), and anisotropic factor underscore its ductility and define anisotropic behaviour. The upward trend in phonon dispersion denotes its thermal resilience. From a thermodynamic perspective, the studied material exhibits superior high-temperature stability under high-stress levels, as confirmed by Debye temperature (<i>θ</i><sub>D</sub>). Furthermore, an inverse association of enthalpy and total entropy with free energy was observed. Comprehensive analysis of RbTaO<sub>3</sub> under varying stress provides valuable insights and highlights its potential in electronics, advanced materials engineering, and high-temperature applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 3","pages":"483 - 497"},"PeriodicalIF":2.2000,"publicationDate":"2024-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Stress-induced transformation on the cubic perovskite RbTaO3 for high-temperature applications: a DFT approach\",\"authors\":\"Muhammad Riaz,&nbsp;Bakhat Ali,&nbsp;Syed Mansoor Ali,&nbsp;M. Ijaz Khan,&nbsp;M. Sana Ullah Sahar,&nbsp;Mubeen Shahid,&nbsp;Manawwer Alam\",\"doi\":\"10.1007/s10825-024-02166-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Oxide perovskites (ABO<sub>3</sub>) have fascinated researchers due to their potential applications in diverse fields because of their flexible chemistry and favourable characteristics including tunable band gap, high carrier mobility, and excellent optical properties. Here, a DFT-based study was conducted on RbTaO<sub>3,</sub> delved into the material behaviour under varying stress ranging from 0 to 100 GPa, emphasizing its potential for advanced applications. Key findings include a reduction in the lattice parameter from 4.2084 to 3.8149 Å, and volume from 74.5334 to 55.5200 Å<sup>3</sup>, along with a band gap narrowing from 1.574 to 1.490 eV. Additionally, DOS analysis gives an understanding of the electronic transitions involving Rb-5<i>s</i>, Ta-5<i>d</i>, and O-2<i>p</i> states. Optically, the material showed high absorption, conductivity, and lower loss function. The mechanical stability is confirmed by Born stability criteria through elastic constants (<i>C</i><sub>11</sub>, <i>C</i><sub>12</sub>, and <i>C</i><sub>44</sub>). Further assessments using Poisson’s ratio, Pugh’s ratio (<i>B</i>/<i>G</i>), Frantsevich ratio, Cauchy pressure (<i>C</i><sub>P</sub>), and anisotropic factor underscore its ductility and define anisotropic behaviour. The upward trend in phonon dispersion denotes its thermal resilience. From a thermodynamic perspective, the studied material exhibits superior high-temperature stability under high-stress levels, as confirmed by Debye temperature (<i>θ</i><sub>D</sub>). Furthermore, an inverse association of enthalpy and total entropy with free energy was observed. Comprehensive analysis of RbTaO<sub>3</sub> under varying stress provides valuable insights and highlights its potential in electronics, advanced materials engineering, and high-temperature applications.</p></div>\",\"PeriodicalId\":620,\"journal\":{\"name\":\"Journal of Computational Electronics\",\"volume\":\"23 3\",\"pages\":\"483 - 497\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-04-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Computational Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10825-024-02166-5\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-024-02166-5","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

氧化物包晶石(ABO3)因其灵活的化学性质以及可调带隙、高载流子迁移率和优异的光学性能等有利特性,在各个领域都具有潜在的应用前景,因而吸引了众多研究人员的目光。本文对 RbTaO3 进行了基于 DFT 的研究,深入探讨了其在 0 到 100 GPa 不同应力下的材料行为,强调了其在先进应用领域的潜力。主要发现包括晶格参数从 4.2084 Å 减小到 3.8149 Å,体积从 74.5334 Å3 减小到 55.5200 Å3,带隙从 1.574 eV 缩小到 1.490 eV。此外,通过 DOS 分析还可以了解涉及 Rb-5s、Ta-5d 和 O-2p 态的电子跃迁。从光学角度来看,该材料具有高吸收率、高导电率和较低的损耗函数。博恩稳定性标准通过弹性常数(C11、C12 和 C44)证实了材料的机械稳定性。使用泊松比、普氏比(B/G)、弗兰采维奇比、考希压力(CP)和各向异性因子进行的进一步评估强调了其延展性,并定义了各向异性行为。声子色散的上升趋势表明了它的热弹性。从热力学角度来看,所研究的材料在高应力水平下表现出卓越的高温稳定性,这一点已被德拜温度(θD)所证实。此外,还观察到焓和总熵与自由能呈反比关系。对不同应力下的 RbTaO3 进行的全面分析提供了宝贵的见解,并凸显了其在电子学、先进材料工程和高温应用方面的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

摘要图片

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Stress-induced transformation on the cubic perovskite RbTaO3 for high-temperature applications: a DFT approach

Oxide perovskites (ABO3) have fascinated researchers due to their potential applications in diverse fields because of their flexible chemistry and favourable characteristics including tunable band gap, high carrier mobility, and excellent optical properties. Here, a DFT-based study was conducted on RbTaO3, delved into the material behaviour under varying stress ranging from 0 to 100 GPa, emphasizing its potential for advanced applications. Key findings include a reduction in the lattice parameter from 4.2084 to 3.8149 Å, and volume from 74.5334 to 55.5200 Å3, along with a band gap narrowing from 1.574 to 1.490 eV. Additionally, DOS analysis gives an understanding of the electronic transitions involving Rb-5s, Ta-5d, and O-2p states. Optically, the material showed high absorption, conductivity, and lower loss function. The mechanical stability is confirmed by Born stability criteria through elastic constants (C11, C12, and C44). Further assessments using Poisson’s ratio, Pugh’s ratio (B/G), Frantsevich ratio, Cauchy pressure (CP), and anisotropic factor underscore its ductility and define anisotropic behaviour. The upward trend in phonon dispersion denotes its thermal resilience. From a thermodynamic perspective, the studied material exhibits superior high-temperature stability under high-stress levels, as confirmed by Debye temperature (θD). Furthermore, an inverse association of enthalpy and total entropy with free energy was observed. Comprehensive analysis of RbTaO3 under varying stress provides valuable insights and highlights its potential in electronics, advanced materials engineering, and high-temperature applications.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
期刊最新文献
Study of the ISO-FDTD algorithm for processing higher-order dielectric function in SF-FDTD UTC-PD's optoelectronic mixing principle and optimal working condition Low-profile MIMO antenna for sub-6G smartphone applications with minimal footprint: an SVM-guided approach Impact of in-plane electric field on the optical properties of CO2 adsorbed 2D MoSe2 monolayer: application as a photodetector Empirical mathematical model based on optimized parameter extraction from captured electrohydrodynamic inkjet memristor device with LTspice model
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1