二维电子器件的三维集成

Darsith Jayachandran, Najam U Sakib, Saptarshi Das
{"title":"二维电子器件的三维集成","authors":"Darsith Jayachandran, Najam U Sakib, Saptarshi Das","doi":"10.1038/s44287-024-00038-5","DOIUrl":null,"url":null,"abstract":"The adoption of three-dimensional (3D) integration has revolutionized NAND flash memory technology, and a similar transformative potential exists for logic circuits, by stacking transistors into the third dimension. This pivotal shift towards 3D integration of logic arrives on the heels of substantial improvements in silicon device structures and their subsequent scaling in size and performance. Yet, advanced scaling requires ultrathin semiconducting channels, which are difficult to achieve using silicon. In this context, field-effect transistors based on two-dimensional (2D) semiconductors have drawn notable attention owing to their atomically thin nature and impressive performance milestones. In addition, 2D materials offer a broader spectrum of functionalities — such as optical, chemical and biological sensing — that extends their utility beyond simple ‘more Moore’ dimensional scaling and enables the development of ‘more than Moore’ technologies. Thus, 3D integration of 2D electronics could bring us unanticipated discoveries, leading to sustainable and energy-efficient computing systems. In this Review, we explore the progress, challenges and future opportunities for 3D integration of 2D electronics. Since the most advanced nodes in silicon are reaching the limits of planar integration, 2D materials could help to advance the semiconductor industry. With the potential for use in multifunctional chips, 2D materials offer combined logic, memory and sensing in integrated 3D chips.","PeriodicalId":501701,"journal":{"name":"Nature Reviews Electrical Engineering","volume":"1 5","pages":"300-316"},"PeriodicalIF":0.0000,"publicationDate":"2024-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s44287-024-00038-5.pdf","citationCount":"0","resultStr":"{\"title\":\"3D integration of 2D electronics\",\"authors\":\"Darsith Jayachandran, Najam U Sakib, Saptarshi Das\",\"doi\":\"10.1038/s44287-024-00038-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The adoption of three-dimensional (3D) integration has revolutionized NAND flash memory technology, and a similar transformative potential exists for logic circuits, by stacking transistors into the third dimension. This pivotal shift towards 3D integration of logic arrives on the heels of substantial improvements in silicon device structures and their subsequent scaling in size and performance. Yet, advanced scaling requires ultrathin semiconducting channels, which are difficult to achieve using silicon. In this context, field-effect transistors based on two-dimensional (2D) semiconductors have drawn notable attention owing to their atomically thin nature and impressive performance milestones. In addition, 2D materials offer a broader spectrum of functionalities — such as optical, chemical and biological sensing — that extends their utility beyond simple ‘more Moore’ dimensional scaling and enables the development of ‘more than Moore’ technologies. Thus, 3D integration of 2D electronics could bring us unanticipated discoveries, leading to sustainable and energy-efficient computing systems. In this Review, we explore the progress, challenges and future opportunities for 3D integration of 2D electronics. Since the most advanced nodes in silicon are reaching the limits of planar integration, 2D materials could help to advance the semiconductor industry. With the potential for use in multifunctional chips, 2D materials offer combined logic, memory and sensing in integrated 3D chips.\",\"PeriodicalId\":501701,\"journal\":{\"name\":\"Nature Reviews Electrical Engineering\",\"volume\":\"1 5\",\"pages\":\"300-316\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-04-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.nature.com/articles/s44287-024-00038-5.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nature Reviews Electrical Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.nature.com/articles/s44287-024-00038-5\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature Reviews Electrical Engineering","FirstCategoryId":"1085","ListUrlMain":"https://www.nature.com/articles/s44287-024-00038-5","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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摘要

三维(3D)集成的采用使 NAND 闪存技术发生了革命性的变化,通过将晶体管堆叠到三维空间,逻辑电路也存在着类似的变革潜力。随着硅器件结构的大幅改进及其尺寸和性能的不断扩大,逻辑电路向三维集成的关键转变也随之而来。然而,先进的扩展需要超薄的半导体通道,而使用硅却很难实现这一点。在这种情况下,基于二维(2D)半导体的场效应晶体管因其原子级超薄特性和令人印象深刻的性能里程碑而备受关注。此外,二维材料还具有更广泛的功能(如光学、化学和生物传感),使其用途超越了简单的 "更摩尔 "维度扩展,并实现了 "比摩尔 "技术的发展。因此,二维电子器件的三维集成可能会给我们带来意想不到的发现,从而带来可持续的高能效计算系统。在本综述中,我们将探讨二维电子器件三维集成的进展、挑战和未来机遇。由于最先进的硅节点已达到平面集成的极限,二维材料有助于推动半导体行业的发展。二维材料具有应用于多功能芯片的潜力,可在集成三维芯片中实现逻辑、存储和传感的组合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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3D integration of 2D electronics
The adoption of three-dimensional (3D) integration has revolutionized NAND flash memory technology, and a similar transformative potential exists for logic circuits, by stacking transistors into the third dimension. This pivotal shift towards 3D integration of logic arrives on the heels of substantial improvements in silicon device structures and their subsequent scaling in size and performance. Yet, advanced scaling requires ultrathin semiconducting channels, which are difficult to achieve using silicon. In this context, field-effect transistors based on two-dimensional (2D) semiconductors have drawn notable attention owing to their atomically thin nature and impressive performance milestones. In addition, 2D materials offer a broader spectrum of functionalities — such as optical, chemical and biological sensing — that extends their utility beyond simple ‘more Moore’ dimensional scaling and enables the development of ‘more than Moore’ technologies. Thus, 3D integration of 2D electronics could bring us unanticipated discoveries, leading to sustainable and energy-efficient computing systems. In this Review, we explore the progress, challenges and future opportunities for 3D integration of 2D electronics. Since the most advanced nodes in silicon are reaching the limits of planar integration, 2D materials could help to advance the semiconductor industry. With the potential for use in multifunctional chips, 2D materials offer combined logic, memory and sensing in integrated 3D chips.
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