K. Uesugi, R. Akaike, S. Ichikawa, Takao Nakamura, K. Kojima, Masahiko Tsuchiya, Hideto Miyake
{"title":"波长范围为 230 纳米的远紫外 LED，MQW 的阱层和势垒层之间的铝成分差异较小","authors":"K. Uesugi, R. Akaike, S. Ichikawa, Takao Nakamura, K. Kojima, Masahiko Tsuchiya, Hideto Miyake","doi":"10.35848/1882-0786/ad3e48","DOIUrl":null,"url":null,"abstract":"\n Reducing the average Al composition of AlxGa1−xN/AlyGa1−yN multiple quantum wells (MQWs) is an effective approach to increase the current injection efficiencies of far-ultraviolet-C light-emitting diodes (far-UVC LEDs). A reduction can be realized by decreasing the Al-composition differentiation between the well and barrier layers. Compared to conventional MQWs, a 230-nm-wavelength far-UVC LED equipped with a single-Al-composition and a 50-nm-thick light-emitting layer exhibits a higher external quantum efficiency (EQE). The EQE of far-UVC LEDs with low Al-composition differentiation (~1%) is enhanced to approximately 0.6% and 1.4% under continuous wave operations at 230 nm and 236 nm wavelengths, respectively.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"48 2","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"230-nm-wavelength range far-UVC LED with low Al-composition differentiation between well and barrier layers of MQWs\",\"authors\":\"K. Uesugi, R. Akaike, S. Ichikawa, Takao Nakamura, K. Kojima, Masahiko Tsuchiya, Hideto Miyake\",\"doi\":\"10.35848/1882-0786/ad3e48\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n Reducing the average Al composition of AlxGa1−xN/AlyGa1−yN multiple quantum wells (MQWs) is an effective approach to increase the current injection efficiencies of far-ultraviolet-C light-emitting diodes (far-UVC LEDs). A reduction can be realized by decreasing the Al-composition differentiation between the well and barrier layers. Compared to conventional MQWs, a 230-nm-wavelength far-UVC LED equipped with a single-Al-composition and a 50-nm-thick light-emitting layer exhibits a higher external quantum efficiency (EQE). The EQE of far-UVC LEDs with low Al-composition differentiation (~1%) is enhanced to approximately 0.6% and 1.4% under continuous wave operations at 230 nm and 236 nm wavelengths, respectively.\",\"PeriodicalId\":503885,\"journal\":{\"name\":\"Applied Physics Express\",\"volume\":\"48 2\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-04-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Express\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.35848/1882-0786/ad3e48\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Express","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.35848/1882-0786/ad3e48","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
230-nm-wavelength range far-UVC LED with low Al-composition differentiation between well and barrier layers of MQWs
Reducing the average Al composition of AlxGa1−xN/AlyGa1−yN multiple quantum wells (MQWs) is an effective approach to increase the current injection efficiencies of far-ultraviolet-C light-emitting diodes (far-UVC LEDs). A reduction can be realized by decreasing the Al-composition differentiation between the well and barrier layers. Compared to conventional MQWs, a 230-nm-wavelength far-UVC LED equipped with a single-Al-composition and a 50-nm-thick light-emitting layer exhibits a higher external quantum efficiency (EQE). The EQE of far-UVC LEDs with low Al-composition differentiation (~1%) is enhanced to approximately 0.6% and 1.4% under continuous wave operations at 230 nm and 236 nm wavelengths, respectively.
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