{"title":"掺锑金红石型二氧化锡薄膜的载流子密度控制与垂直肖特基势垒二极管的制造","authors":"Yui Takahashi, Hitoshi Takane, Hirokazu Izumi, Takeru Wakamatsu, Yuki Isobe, Kentaro Kaneko, Katsuhisa Tanaka","doi":"10.35848/1882-0786/ad3d2b","DOIUrl":null,"url":null,"abstract":"\n We report on the control of carrier density in r-SnO2 thin films grown on isostructural r-TiO2 substrates by doping with Sb aiming for power-electronics applications. The carrier density was tuned within a range of 3×1016 −2×1019 cm−3. Two types of donors with different activation energies, attributed to Sb at Sn sites and oxygen vacancies, are present in the thin films. Both activation energies decrease as the concentration of Sb increases. A vertical Schottky barrier diode employing a Sb:r-SnO2/Nb:r-TiO2 exhibits a clear rectifying property with a rectification ratio of 103 at ± 1V.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"1 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Carrier density control of Sb-doped rutile-type SnO2 thin films and fabrication of a vertical Schottky barrier diode\",\"authors\":\"Yui Takahashi, Hitoshi Takane, Hirokazu Izumi, Takeru Wakamatsu, Yuki Isobe, Kentaro Kaneko, Katsuhisa Tanaka\",\"doi\":\"10.35848/1882-0786/ad3d2b\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n We report on the control of carrier density in r-SnO2 thin films grown on isostructural r-TiO2 substrates by doping with Sb aiming for power-electronics applications. The carrier density was tuned within a range of 3×1016 −2×1019 cm−3. Two types of donors with different activation energies, attributed to Sb at Sn sites and oxygen vacancies, are present in the thin films. Both activation energies decrease as the concentration of Sb increases. A vertical Schottky barrier diode employing a Sb:r-SnO2/Nb:r-TiO2 exhibits a clear rectifying property with a rectification ratio of 103 at ± 1V.\",\"PeriodicalId\":503885,\"journal\":{\"name\":\"Applied Physics Express\",\"volume\":\"1 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-04-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Express\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.35848/1882-0786/ad3d2b\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Express","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.35848/1882-0786/ad3d2b","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Carrier density control of Sb-doped rutile-type SnO2 thin films and fabrication of a vertical Schottky barrier diode
We report on the control of carrier density in r-SnO2 thin films grown on isostructural r-TiO2 substrates by doping with Sb aiming for power-electronics applications. The carrier density was tuned within a range of 3×1016 −2×1019 cm−3. Two types of donors with different activation energies, attributed to Sb at Sn sites and oxygen vacancies, are present in the thin films. Both activation energies decrease as the concentration of Sb increases. A vertical Schottky barrier diode employing a Sb:r-SnO2/Nb:r-TiO2 exhibits a clear rectifying property with a rectification ratio of 103 at ± 1V.
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