使用 SiGe CMOS 工艺在 180 GHz 频率下工作的片上喇叭天线

Telecom Pub Date : 2024-04-08 DOI:10.3390/telecom5020015
Ming-An Chung, Zi-Yu Huang, Yu-Hsun Chen
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引用次数: 0

摘要

本文提出了一种毫米波芯片天线。这种天线与台积电 180 纳米 SiGe CMOS 技术相结合,具有体积小、适用于无线通信的优点。在 M4-M6 上实现的多层结构 Horn 天线可同时满足工艺可靠性规范和辐射性能要求。仿真结果显示,最大增益为 -4.2 dBi。回波损耗测量结果与仿真结果基本一致,带宽范围为 177.4-183 GHz。本文首先介绍了天线的制作过程和测量结果,分析了参数对天线的影响,并进一步与其他设计进行了比较。本文的亮点在于提出了一种设计方案,既解决了毫米波损耗大的问题,又成功减小了面积。同时,本文有助于读者今后的优化和继续研究方向,同时有助于仿真和测量趋势,让读者了解 CMOS 芯片天线仿真和测量的稳定性。
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Horn Antenna on Chip Operating at 180 GHz Using the SiGe CMOS Process
This article proposes a chip antenna on millimeter-Waves. This antenna combined with TSMC 180 nm SiGe CMOS technology has the advantage of being small in size and is suitable for wireless communications. The multilayer architecture Horn antenna implemented on M4–M6 can meet both process reliability specifications and radiation performance. The results of the simulation show that the maximum gain is −4.2 dBi. The return loss measurement results are almost consistent with the simulation results, and the bandwidth range is 177.4–183 GHz. This article first describes the antenna production process and measurement results, analyses the impact of the parameters on the antenna, and further compares it with other designs. The excellence of this article is that it proposes a design that solves the problem of large millimeter wave loss and successfully reduces the area. At the same time, this article can contribute to readers’ future optimization and continued research directions, and at the same time contribute simulation and measurement trends to let readers understand the stability of CMOS chip antenna simulation and measurement.
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