L. Gaioni, A. Galliani, L. Ratti, V. Re, G. Traversi
{"title":"用于未来高速率应用中像素传感器读出的 28 纳米前端通道","authors":"L. Gaioni, A. Galliani, L. Ratti, V. Re, G. Traversi","doi":"10.1088/1748-0221/19/04/c04001","DOIUrl":null,"url":null,"abstract":"\n This work is concerned with the design and the characterization of front-end channels, developed in a 28 nm CMOS technology, conceived for the readout of pixel sensors in future, high-rate applications at the next generation facilities.\nTwo front-end architectures are discussed. In the first one, an in-pixel flash ADC is exploited for the digitization of the signal, whereas the second one features a Time-over-Threshold (ToT) approach. A prototype including the ADC-based front-end has been submitted and the characterization of the chip is discussed in the paper. Simulation results relevant to the ToT-based architecture are reported.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":"129 2","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"28 nm front-end channels for the readout of pixel sensors in future high-rate applications\",\"authors\":\"L. Gaioni, A. Galliani, L. Ratti, V. Re, G. Traversi\",\"doi\":\"10.1088/1748-0221/19/04/c04001\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n This work is concerned with the design and the characterization of front-end channels, developed in a 28 nm CMOS technology, conceived for the readout of pixel sensors in future, high-rate applications at the next generation facilities.\\nTwo front-end architectures are discussed. In the first one, an in-pixel flash ADC is exploited for the digitization of the signal, whereas the second one features a Time-over-Threshold (ToT) approach. A prototype including the ADC-based front-end has been submitted and the characterization of the chip is discussed in the paper. Simulation results relevant to the ToT-based architecture are reported.\",\"PeriodicalId\":507814,\"journal\":{\"name\":\"Journal of Instrumentation\",\"volume\":\"129 2\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Instrumentation\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/1748-0221/19/04/c04001\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Instrumentation","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1748-0221/19/04/c04001","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
28 nm front-end channels for the readout of pixel sensors in future high-rate applications
This work is concerned with the design and the characterization of front-end channels, developed in a 28 nm CMOS technology, conceived for the readout of pixel sensors in future, high-rate applications at the next generation facilities.
Two front-end architectures are discussed. In the first one, an in-pixel flash ADC is exploited for the digitization of the signal, whereas the second one features a Time-over-Threshold (ToT) approach. A prototype including the ADC-based front-end has been submitted and the characterization of the chip is discussed in the paper. Simulation results relevant to the ToT-based architecture are reported.