连续吸收器中准束缚态的逆设计

IF 2.2 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Quantum Electronics Pub Date : 2024-04-29 DOI:10.1109/JQE.2024.3395127
Yun Chen;Jiahe Yu;Wentao Zhang;Wei Huang
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引用次数: 0

摘要

在这项研究中,我们利用耦合模式理论(CMT)和干涉理论证明了吸收频率与连续体中准束缚态(准 BIC)频率之间的关系。该结构由对称保护的 BIC 金属结构层、聚酰亚胺间隔层和硅衬底组成。顶层包含两个类似的金属结构,通过稍微改变其中一个金属结构,使结构变得不对称,从而产生一个对称的断裂准 BIC。当在介质间隔层的底部加入金属反射板时,就形成了准 BIC 吸收器。这是首次利用耦合模式方程进行理论计算,分析准 BIC 吸收体的吸收频率与准 BIC 共振频率之间的关系,而准 BIC 共振频率与单胞中单一结构的共振频率有关。根据单元格内结构间的耦合强度和距离与准 BIC 共振频率之间的关系,可以对频率范围内吸波材料的几何参数进行逆向设计。
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Inverse Design of Quasi-Bound States in the Continuum Absorber
In this study, we demonstrate the relationship between the absorbing frequency and the quasi-bound states in the continuum (quasi-BIC) frequency by employing the coupled-mode theory (CMT) and interference theory. The structure consists of a symmetric-protected BIC metal structure layer, a polyimide spacer layer, and a silicon substrate. The top layer contains two similar metal structures, which make the structure asymmetric by varying one of them slightly, thus producing a symmetrical broken quasi-BIC. When a metal reflecting plate is added to the bottom of the dielectric spacer layer, a quasi-BIC absorber is formed. This is the first theoretical calculation using the coupled mode equation to analyze the relationship between the absorption frequency of a quasi-BIC absorber and the quasi-BIC resonance frequency, which is related to the resonance frequency of a single structure in a unit cell. According to the relationship between the coupling strength and distance between the structures within a unit cell combined with the resonant frequency of quasi-BIC, the geometric parameters of the absorber within a frequency range can be inverse design.
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来源期刊
IEEE Journal of Quantum Electronics
IEEE Journal of Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.70
自引率
4.00%
发文量
99
审稿时长
3.0 months
期刊介绍: The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.
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