{"title":"连续吸收器中准束缚态的逆设计","authors":"Yun Chen;Jiahe Yu;Wentao Zhang;Wei Huang","doi":"10.1109/JQE.2024.3395127","DOIUrl":null,"url":null,"abstract":"In this study, we demonstrate the relationship between the absorbing frequency and the quasi-bound states in the continuum (quasi-BIC) frequency by employing the coupled-mode theory (CMT) and interference theory. The structure consists of a symmetric-protected BIC metal structure layer, a polyimide spacer layer, and a silicon substrate. The top layer contains two similar metal structures, which make the structure asymmetric by varying one of them slightly, thus producing a symmetrical broken quasi-BIC. When a metal reflecting plate is added to the bottom of the dielectric spacer layer, a quasi-BIC absorber is formed. This is the first theoretical calculation using the coupled mode equation to analyze the relationship between the absorption frequency of a quasi-BIC absorber and the quasi-BIC resonance frequency, which is related to the resonance frequency of a single structure in a unit cell. According to the relationship between the coupling strength and distance between the structures within a unit cell combined with the resonant frequency of quasi-BIC, the geometric parameters of the absorber within a frequency range can be inverse design.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 3","pages":"1-11"},"PeriodicalIF":2.2000,"publicationDate":"2024-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Inverse Design of Quasi-Bound States in the Continuum Absorber\",\"authors\":\"Yun Chen;Jiahe Yu;Wentao Zhang;Wei Huang\",\"doi\":\"10.1109/JQE.2024.3395127\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, we demonstrate the relationship between the absorbing frequency and the quasi-bound states in the continuum (quasi-BIC) frequency by employing the coupled-mode theory (CMT) and interference theory. The structure consists of a symmetric-protected BIC metal structure layer, a polyimide spacer layer, and a silicon substrate. The top layer contains two similar metal structures, which make the structure asymmetric by varying one of them slightly, thus producing a symmetrical broken quasi-BIC. When a metal reflecting plate is added to the bottom of the dielectric spacer layer, a quasi-BIC absorber is formed. This is the first theoretical calculation using the coupled mode equation to analyze the relationship between the absorption frequency of a quasi-BIC absorber and the quasi-BIC resonance frequency, which is related to the resonance frequency of a single structure in a unit cell. According to the relationship between the coupling strength and distance between the structures within a unit cell combined with the resonant frequency of quasi-BIC, the geometric parameters of the absorber within a frequency range can be inverse design.\",\"PeriodicalId\":13200,\"journal\":{\"name\":\"IEEE Journal of Quantum Electronics\",\"volume\":\"60 3\",\"pages\":\"1-11\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10510279/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10510279/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Inverse Design of Quasi-Bound States in the Continuum Absorber
In this study, we demonstrate the relationship between the absorbing frequency and the quasi-bound states in the continuum (quasi-BIC) frequency by employing the coupled-mode theory (CMT) and interference theory. The structure consists of a symmetric-protected BIC metal structure layer, a polyimide spacer layer, and a silicon substrate. The top layer contains two similar metal structures, which make the structure asymmetric by varying one of them slightly, thus producing a symmetrical broken quasi-BIC. When a metal reflecting plate is added to the bottom of the dielectric spacer layer, a quasi-BIC absorber is formed. This is the first theoretical calculation using the coupled mode equation to analyze the relationship between the absorption frequency of a quasi-BIC absorber and the quasi-BIC resonance frequency, which is related to the resonance frequency of a single structure in a unit cell. According to the relationship between the coupling strength and distance between the structures within a unit cell combined with the resonant frequency of quasi-BIC, the geometric parameters of the absorber within a frequency range can be inverse design.
期刊介绍:
The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.