{"title":"高效阶跃梯度 Inx Ga1-x N/GaN 超晶格太阳能电池","authors":"Dickson Warepam, Khomdram Jolson Singh, Rudra Sankar Dhar","doi":"10.1117/1.jnp.18.026002","DOIUrl":null,"url":null,"abstract":"The band-gap of InxGa1−xN can cover a wide range of electromagnetic radiation of the solar spectrum and offers a method for using it in photovoltaic solar cells. A solar cell structure consisting of InxGa1−xN/GaN superlattice (SL) piled up between p-GaN and n-GaN is modeled and simulated. The impact of variations in the indium mole fraction and step graded SL having different quantum well thicknesses are analyzed. The results indicate that high indium content leads to lattice mismatch, decrement of fill factor, and development of strain in the quantum wells that reduce the overall efficiency. To increase the efficiency of the solar cell, a step graded 20 SL with a 5 nm quantum well thickness is introduced, and the highest efficiency of 22.6% is obtained. The use of a step graded SL InGaN cell allows for constructing real structures with the possibility of obtaining the enhanced power conversion efficiency compared with a conventional quantum well solar cell using SILVACO TCAD.","PeriodicalId":1,"journal":{"name":"Accounts of Chemical Research","volume":null,"pages":null},"PeriodicalIF":16.4000,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High efficient step graded Inx Ga1−x N/GaN superlattice solar cell\",\"authors\":\"Dickson Warepam, Khomdram Jolson Singh, Rudra Sankar Dhar\",\"doi\":\"10.1117/1.jnp.18.026002\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The band-gap of InxGa1−xN can cover a wide range of electromagnetic radiation of the solar spectrum and offers a method for using it in photovoltaic solar cells. A solar cell structure consisting of InxGa1−xN/GaN superlattice (SL) piled up between p-GaN and n-GaN is modeled and simulated. The impact of variations in the indium mole fraction and step graded SL having different quantum well thicknesses are analyzed. The results indicate that high indium content leads to lattice mismatch, decrement of fill factor, and development of strain in the quantum wells that reduce the overall efficiency. To increase the efficiency of the solar cell, a step graded 20 SL with a 5 nm quantum well thickness is introduced, and the highest efficiency of 22.6% is obtained. The use of a step graded SL InGaN cell allows for constructing real structures with the possibility of obtaining the enhanced power conversion efficiency compared with a conventional quantum well solar cell using SILVACO TCAD.\",\"PeriodicalId\":1,\"journal\":{\"name\":\"Accounts of Chemical Research\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":16.4000,\"publicationDate\":\"2024-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Accounts of Chemical Research\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1117/1.jnp.18.026002\",\"RegionNum\":1,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of Chemical Research","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1117/1.jnp.18.026002","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
High efficient step graded Inx Ga1−x N/GaN superlattice solar cell
The band-gap of InxGa1−xN can cover a wide range of electromagnetic radiation of the solar spectrum and offers a method for using it in photovoltaic solar cells. A solar cell structure consisting of InxGa1−xN/GaN superlattice (SL) piled up between p-GaN and n-GaN is modeled and simulated. The impact of variations in the indium mole fraction and step graded SL having different quantum well thicknesses are analyzed. The results indicate that high indium content leads to lattice mismatch, decrement of fill factor, and development of strain in the quantum wells that reduce the overall efficiency. To increase the efficiency of the solar cell, a step graded 20 SL with a 5 nm quantum well thickness is introduced, and the highest efficiency of 22.6% is obtained. The use of a step graded SL InGaN cell allows for constructing real structures with the possibility of obtaining the enhanced power conversion efficiency compared with a conventional quantum well solar cell using SILVACO TCAD.
期刊介绍：
Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance.
Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.
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