Part-Level Fault Classification of Mass Flow Controller Drift in Plasma Deposition Equipment

Semiconductor manufacturing processing can be jeopardized due to process fluctuations, and the degradation of equipment parts can significantly influence process variation. Timely diagnosing equipment faults causing process variations is desired in current high-end product manufacturing. This paper proposes a diagnostic method for the SiH4 gas flow rate drift using N2 vibrational transition in oxide deposition. In this research, optical emission spectroscopy (OES) and quadrupole mass spectrometer (QMS) are employed as condition monitoring sensors serving as a reference model to compare the diagnostic performance for gas flow rate drift. The study observes that the OES model exhibits much higher performance for minor diagnoses of less than 5% drift. The diagnostic model performance can be enhanced by incorporating plasma condition and gas indicators compared to when these indicators are used individually. This suggests that when conducting diagnostics for equipment and processes, it is crucial to consider indirect indicators like plasma indicators along with direct indicators such as gas radical density. The comprehensive use of both types of indicators enhances the diagnostic performance, providing a more accurate assessment of the conditions and potential problem in semiconductor manufacturing.