Kai Qiao;Yu Chang;Zefang Xu;Fei Yin;Liyu Liu;Jieying Wang;Chang Su;Linmeng Xu;Mengyan Fang;Chunliang Liu;Jinshou Tian;Xing Wang
{"title":"亚微米级倍增宽度的 InGaAs/InP 单光子雪崩二极管分析","authors":"Kai Qiao;Yu Chang;Zefang Xu;Fei Yin;Liyu Liu;Jieying Wang;Chang Su;Linmeng Xu;Mengyan Fang;Chunliang Liu;Jinshou Tian;Xing Wang","doi":"10.1109/JQE.2024.3399176","DOIUrl":null,"url":null,"abstract":"InGaAs/InP single-photon avalanche photodiodes (SPADs) is capable of detecting single-photon in the near-infrared spectrum for applications such as quantum communication, fluorescence lifetime imaging, and Light detection and ranging(LIDAR). The effect of multiplication layer width on the performance of SPADs in both linear and Geiger mode have been theoretically studied. Three-types of InGaAs/InP planer SPADs with different multiplication width are fabricated and evaluated. The results of this study suggest that modifying the width of the multiplication layer can regulate the breakdown voltage, punch-through voltage, and dark current of the device. It is found that the measured time jitter is decreasing with the reduction of the width of the multiplication region. These characteristics can be used to optimize the temporal resolution of SPADs device.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2024-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of InGaAs/InP Single Photon Avalanche Diodes With Multiplication Width in Sub-Micron\",\"authors\":\"Kai Qiao;Yu Chang;Zefang Xu;Fei Yin;Liyu Liu;Jieying Wang;Chang Su;Linmeng Xu;Mengyan Fang;Chunliang Liu;Jinshou Tian;Xing Wang\",\"doi\":\"10.1109/JQE.2024.3399176\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InGaAs/InP single-photon avalanche photodiodes (SPADs) is capable of detecting single-photon in the near-infrared spectrum for applications such as quantum communication, fluorescence lifetime imaging, and Light detection and ranging(LIDAR). The effect of multiplication layer width on the performance of SPADs in both linear and Geiger mode have been theoretically studied. Three-types of InGaAs/InP planer SPADs with different multiplication width are fabricated and evaluated. The results of this study suggest that modifying the width of the multiplication layer can regulate the breakdown voltage, punch-through voltage, and dark current of the device. It is found that the measured time jitter is decreasing with the reduction of the width of the multiplication region. These characteristics can be used to optimize the temporal resolution of SPADs device.\",\"PeriodicalId\":13200,\"journal\":{\"name\":\"IEEE Journal of Quantum Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-03-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10528292/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10528292/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Analysis of InGaAs/InP Single Photon Avalanche Diodes With Multiplication Width in Sub-Micron
InGaAs/InP single-photon avalanche photodiodes (SPADs) is capable of detecting single-photon in the near-infrared spectrum for applications such as quantum communication, fluorescence lifetime imaging, and Light detection and ranging(LIDAR). The effect of multiplication layer width on the performance of SPADs in both linear and Geiger mode have been theoretically studied. Three-types of InGaAs/InP planer SPADs with different multiplication width are fabricated and evaluated. The results of this study suggest that modifying the width of the multiplication layer can regulate the breakdown voltage, punch-through voltage, and dark current of the device. It is found that the measured time jitter is decreasing with the reduction of the width of the multiplication region. These characteristics can be used to optimize the temporal resolution of SPADs device.
期刊介绍：
The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.
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