通过高温氧化和低温再氧化在二氧化硅/碳化硅界面上生成单光子发射器

IF 2.3 4区 物理与天体物理 Q3 PHYSICS, APPLIED Applied Physics Express Pub Date : 2024-05-10 DOI:10.35848/1882-0786/ad4449
Kentaro Onishi, Takato Nakanuma, Kosuke Tahara, Katsuhiro Kutsuki, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi
{"title":"通过高温氧化和低温再氧化在二氧化硅/碳化硅界面上生成单光子发射器","authors":"Kentaro Onishi, Takato Nakanuma, Kosuke Tahara, Katsuhiro Kutsuki, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi","doi":"10.35848/1882-0786/ad4449","DOIUrl":null,"url":null,"abstract":"We report on an approach to produce single photon emitters at the SiO<sub>2</sub>/SiC interface. We form a high-quality SiO<sub>2</sub>/SiC interface by high-temperature oxidation and subsequently perform oxidation at lower temperatures (200 °C–1000 °C) to generate the emitters. After reoxidation at 800 °C, we confirmed the formation of emitters with a bright luminescence (&gt;50 kcps). Through Hambury-Brown and Twiss measurements, single photon characteristics were confirmed. Thus, the proposed approach is effective in generating highly bright single photon emitters at the SiO<sub>2</sub>/SiC interface.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3000,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Generation of single photon emitters at a SiO2/SiC interface by high-temperature oxidation and reoxidation at lower temperatures\",\"authors\":\"Kentaro Onishi, Takato Nakanuma, Kosuke Tahara, Katsuhiro Kutsuki, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi\",\"doi\":\"10.35848/1882-0786/ad4449\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on an approach to produce single photon emitters at the SiO<sub>2</sub>/SiC interface. We form a high-quality SiO<sub>2</sub>/SiC interface by high-temperature oxidation and subsequently perform oxidation at lower temperatures (200 °C–1000 °C) to generate the emitters. After reoxidation at 800 °C, we confirmed the formation of emitters with a bright luminescence (&gt;50 kcps). Through Hambury-Brown and Twiss measurements, single photon characteristics were confirmed. Thus, the proposed approach is effective in generating highly bright single photon emitters at the SiO<sub>2</sub>/SiC interface.\",\"PeriodicalId\":8093,\"journal\":{\"name\":\"Applied Physics Express\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2024-05-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Express\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.35848/1882-0786/ad4449\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Express","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1882-0786/ad4449","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0

摘要

我们报告了一种在二氧化硅/碳化硅界面上产生单光子发射器的方法。我们通过高温氧化形成了高质量的二氧化硅/碳化硅界面,随后在较低温度(200 ℃-1000 ℃)下进行氧化以产生发光体。在 800 °C 再氧化后,我们确认形成了具有明亮发光(50 kcps)的发光体。通过 Hambury-Brown 和 Twiss 测量,证实了单光子特性。因此,所提出的方法能有效地在二氧化硅/碳化硅界面上产生高亮度的单光子发光体。
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Generation of single photon emitters at a SiO2/SiC interface by high-temperature oxidation and reoxidation at lower temperatures
We report on an approach to produce single photon emitters at the SiO2/SiC interface. We form a high-quality SiO2/SiC interface by high-temperature oxidation and subsequently perform oxidation at lower temperatures (200 °C–1000 °C) to generate the emitters. After reoxidation at 800 °C, we confirmed the formation of emitters with a bright luminescence (>50 kcps). Through Hambury-Brown and Twiss measurements, single photon characteristics were confirmed. Thus, the proposed approach is effective in generating highly bright single photon emitters at the SiO2/SiC interface.
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来源期刊
Applied Physics Express
Applied Physics Express 物理-物理:应用
CiteScore
4.80
自引率
8.70%
发文量
310
审稿时长
1.2 months
期刊介绍: Applied Physics Express (APEX) is a letters journal devoted solely to rapid dissemination of up-to-date and concise reports on new findings in applied physics. The motto of APEX is high scientific quality and prompt publication. APEX is a sister journal of the Japanese Journal of Applied Physics (JJAP) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
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