开发一种测量闪烁膜中铀和钍痕量水平的方法

IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2024-05-09 DOI:10.1093/ptep/ptae071
K Ichimura, K Chiba, Y Gando, H Ikeda, Y Kishimoto, M Kurasawa, K Nemoto, A Sakaguchi, Y Takaku, Y Sakakieda
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引用次数: 0

摘要

我们建立了一种方法,通过结合干灰化法和电感耦合等离子体质谱法,测量闪烁膜中每克(pg g-1)皮克级的 238U 和 232Th。最多可测量 2 克闪烁膜中的痕量 238U 和 232Th,收集效率几乎达到 100%。本文详细介绍了实验过程,包括样品和实验器皿的预处理、方法的检测限、238U 和 232Th 的收集效率,以及聚萘二甲酸乙二醇酯薄膜中 238U 和 232Th 的测量。该方法也适用于在其他低背景有机材料中测量 238U 和 232Th,以进行罕见事件搜索实验。
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Development of a method to measure trace level of uranium and thorium in scintillation films
We have established a method to measure picograms-per-gram (pg g−1) levels of 238U and 232Th in scintillation films by combining the dry ashing method and inductively coupled plasma mass spectrometry. Trace amounts of 238U and 232Th were measured in up to 2 g of the scintillation film with almost 100% collection efficiency. This paper details the experimental procedure, including the pretreatment of the samples and labware, detection limit of the method, collection efficiencies of 238U and 232Th, and measurement of 238U and 232Th in a polyethylene naphthalate film. This method is also applicable to 238U and 232Th measurements in other low-background organic materials for rare event search experiments.
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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
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