Boxuan Zhou , Jin Ho Kang , Bangyao Hu , Jingyuan Zhou , Huaying Ren , Jingxuan Zhou , Dehui Zhang , Ao Zhang , Shuanghao Zheng , Chee Wei Wong , Yu Huang , Xiangfeng Duan
{"title":"块状单层 MoS2 薄膜中的巨大二次谐波生成","authors":"Boxuan Zhou , Jin Ho Kang , Bangyao Hu , Jingyuan Zhou , Huaying Ren , Jingxuan Zhou , Dehui Zhang , Ao Zhang , Shuanghao Zheng , Chee Wei Wong , Yu Huang , Xiangfeng Duan","doi":"10.1016/j.matt.2024.04.043","DOIUrl":null,"url":null,"abstract":"<div><p>Monolayer molybdenum disulfide (MoS<sub>2</sub>) features exceptional second-order nonlinear optical (NLO) susceptibility, while being atomically thin limits its efficiency in second harmonic generation (SHG). The naturally existing 2H-phase MoS<sub>2</sub> may offer a larger optical cross section in its bulk form but is inactive for SHG due to the restored centrosymmetry. Here, we report a thickness- and area-scalable bulk monolayer MoS<sub>2</sub> (BM-MoS<sub>2</sub>) thin film for highly efficient SHG. The solution-assembled centimeter-scale BM-MoS<sub>2</sub> consists of alternating monolayer MoS<sub>2</sub> crystals and organic molecular layers that prevent interlayer coupling, thus preserving monolayer-like physical properties while achieving increased optical cross sections. The SHG studies demonstrate a giant SHG in BM-MoS<sub>2</sub> that is 126 times higher than monolayer MoS<sub>2</sub> and 21 times higher than gallium arsenide (GaAs), a material with the highest second-order NLO susceptibility among known bulk semiconductors. The facile assembly of BM-MoS<sub>2</sub> thin films with efficient SHG offers a scalable pathway for developing ultrathin, efficient, and cost-effective NLO devices.</p></div>","PeriodicalId":388,"journal":{"name":"Matter","volume":null,"pages":null},"PeriodicalIF":17.3000,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Giant second harmonic generation in bulk monolayer MoS2 thin films\",\"authors\":\"Boxuan Zhou , Jin Ho Kang , Bangyao Hu , Jingyuan Zhou , Huaying Ren , Jingxuan Zhou , Dehui Zhang , Ao Zhang , Shuanghao Zheng , Chee Wei Wong , Yu Huang , Xiangfeng Duan\",\"doi\":\"10.1016/j.matt.2024.04.043\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Monolayer molybdenum disulfide (MoS<sub>2</sub>) features exceptional second-order nonlinear optical (NLO) susceptibility, while being atomically thin limits its efficiency in second harmonic generation (SHG). The naturally existing 2H-phase MoS<sub>2</sub> may offer a larger optical cross section in its bulk form but is inactive for SHG due to the restored centrosymmetry. Here, we report a thickness- and area-scalable bulk monolayer MoS<sub>2</sub> (BM-MoS<sub>2</sub>) thin film for highly efficient SHG. The solution-assembled centimeter-scale BM-MoS<sub>2</sub> consists of alternating monolayer MoS<sub>2</sub> crystals and organic molecular layers that prevent interlayer coupling, thus preserving monolayer-like physical properties while achieving increased optical cross sections. The SHG studies demonstrate a giant SHG in BM-MoS<sub>2</sub> that is 126 times higher than monolayer MoS<sub>2</sub> and 21 times higher than gallium arsenide (GaAs), a material with the highest second-order NLO susceptibility among known bulk semiconductors. The facile assembly of BM-MoS<sub>2</sub> thin films with efficient SHG offers a scalable pathway for developing ultrathin, efficient, and cost-effective NLO devices.</p></div>\",\"PeriodicalId\":388,\"journal\":{\"name\":\"Matter\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":17.3000,\"publicationDate\":\"2024-07-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Matter\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2590238524002212\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Matter","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2590238524002212","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Giant second harmonic generation in bulk monolayer MoS2 thin films
Monolayer molybdenum disulfide (MoS2) features exceptional second-order nonlinear optical (NLO) susceptibility, while being atomically thin limits its efficiency in second harmonic generation (SHG). The naturally existing 2H-phase MoS2 may offer a larger optical cross section in its bulk form but is inactive for SHG due to the restored centrosymmetry. Here, we report a thickness- and area-scalable bulk monolayer MoS2 (BM-MoS2) thin film for highly efficient SHG. The solution-assembled centimeter-scale BM-MoS2 consists of alternating monolayer MoS2 crystals and organic molecular layers that prevent interlayer coupling, thus preserving monolayer-like physical properties while achieving increased optical cross sections. The SHG studies demonstrate a giant SHG in BM-MoS2 that is 126 times higher than monolayer MoS2 and 21 times higher than gallium arsenide (GaAs), a material with the highest second-order NLO susceptibility among known bulk semiconductors. The facile assembly of BM-MoS2 thin films with efficient SHG offers a scalable pathway for developing ultrathin, efficient, and cost-effective NLO devices.
期刊介绍:
Matter, a monthly journal affiliated with Cell, spans the broad field of materials science from nano to macro levels,covering fundamentals to applications. Embracing groundbreaking technologies,it includes full-length research articles,reviews, perspectives,previews, opinions, personnel stories, and general editorial content.
Matter aims to be the primary resource for researchers in academia and industry, inspiring the next generation of materials scientists.