纳米晶金刚石侧向过度生长，实现与无籽金刚石表面的高导热接触

ECS Transactions Pub Date : 2024-05-17 DOI:10.1149/11307.0015ecst

Daniel Francis, Xiaoyang Ji, Sai Charan Vanjari, Marko Tadjer, Tatyana Feygelson, James Spencer Lundh, Hannah Masten, Joseph Spencer, A. Jacobs, Travis J. Anderson, Karl D. Hobart, Bradford Pate, Martin Kuball, Felix Ejeckam

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引用次数: 0

摘要

我们展示了纳米晶金刚石的无籽横向过度生长，以此来提高金刚石薄层的热导率。该技术可用于在半导体顶部生长金刚石，形成与半导体直接接触的高热导率金刚石薄层，并可将氮化镓封装在高热导率金刚石中。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Nanocrystalline Diamond Lateral Overgrowth for High Thermal Conductivity Contact to Unseeded Diamond Surface

We demonstrate unseeded lateral overgrowth of nanocrystalline diamond as a way of increasing the thermal conductivity of thin layers of diamond. The technique can be used as a way of growing diamond on top of semiconductors, creating a thin layer of high thermal conductivity diamond in direct contact with semiconductors and allowing for the encasement of GaN in high thermal conductivity diamond.

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ECS Transactions

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