氧化物电荷对强反转条件下具有 Al2O3/SiO2 栅极叠层的 MOS（p）器件中少数载流子响应的影响

ECS Transactions Pub Date : 2024-05-17 DOI:10.1149/11302.0043ecst

Chi-Yi Kao, Tai-Ming Kung, J. Hwu

{"title":"氧化物电荷对强反转条件下具有 Al2O3/SiO2 栅极叠层的 MOS（p）器件中少数载流子响应的影响","authors":"Chi-Yi Kao, Tai-Ming Kung, J. Hwu","doi":"10.1149/11302.0043ecst","DOIUrl":null,"url":null,"abstract":"In this study, a compact model proposed in the previous work (2) was utilized to elucidate an unusual minority carrier response time observed in MOS(p) devices with Al2O3/SiO2 gate stacks. It is supposed that the number of oxide charges increases with SiO2 thickness. The findings confirmed the heightened sensitivity of device alternating current (AC) characteristics to oxide charges in the outer region. Accordingly, we explored the dependencies of oxide thickness and quality on the transition frequency (ωm) of devices.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"41 39","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of Oxide Charges on The Minority Carrier Response in MOS(p) Devices With Al2O3/SiO2 Gate Stacks under Strong Inversion Condition\",\"authors\":\"Chi-Yi Kao, Tai-Ming Kung, J. Hwu\",\"doi\":\"10.1149/11302.0043ecst\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, a compact model proposed in the previous work (2) was utilized to elucidate an unusual minority carrier response time observed in MOS(p) devices with Al2O3/SiO2 gate stacks. It is supposed that the number of oxide charges increases with SiO2 thickness. The findings confirmed the heightened sensitivity of device alternating current (AC) characteristics to oxide charges in the outer region. Accordingly, we explored the dependencies of oxide thickness and quality on the transition frequency (ωm) of devices.\",\"PeriodicalId\":11473,\"journal\":{\"name\":\"ECS Transactions\",\"volume\":\"41 39\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ECS Transactions\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1149/11302.0043ecst\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Transactions","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/11302.0043ecst","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在本研究中，我们利用之前工作（2）中提出的一个紧凑模型来阐明在采用 Al2O3/SiO2 栅极堆栈的 MOS（p）器件中观察到的不寻常的少数载流子响应时间。据推测，氧化物电荷的数量会随着二氧化硅厚度的增加而增加。研究结果证实，器件的交流电（AC）特性对外部区域的氧化物电荷更加敏感。因此，我们探讨了氧化物厚度和质量对器件过渡频率 (ωm)的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Impact of Oxide Charges on The Minority Carrier Response in MOS(p) Devices With Al2O3/SiO2 Gate Stacks under Strong Inversion Condition

In this study, a compact model proposed in the previous work (2) was utilized to elucidate an unusual minority carrier response time observed in MOS(p) devices with Al2O3/SiO2 gate stacks. It is supposed that the number of oxide charges increases with SiO2 thickness. The findings confirmed the heightened sensitivity of device alternating current (AC) characteristics to oxide charges in the outer region. Accordingly, we explored the dependencies of oxide thickness and quality on the transition frequency (ωm) of devices.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

ECS Transactions

自引率

0.00%

发文量