Dr. K. Paramasivam, Ameer M, Bala Krishna R M, Kishore K
{"title":"晶闸管统一建模方法研究：下一代半导体器件","authors":"Dr. K. Paramasivam, Ameer M, Bala Krishna R M, Kishore K","doi":"10.59256/ijsreat.20240403005","DOIUrl":null,"url":null,"abstract":"This research investigates the voltage-current (V-I) characteristics of three distinct memristor models, each representing a unique composition and behaviour. The model, denoted as TiN-TiOx-HfOx-Pt-Bilayered Memristor model, is a compact representation designed for Metal–Oxide Resistive Random Access Memory (RRAM). Matlab tool is used for the simulation to analyse V-I characteristics of Memristor. Through comprehensive analysis and simulations, we aim to provide a detailed insight into the intrinsic behaviours of the memristor models. Understanding the V-I characteristics of these models is crucial for their potential applications in emerging memory technologies. This Study elaborate the mathematical modelling of memristor with the outcome untuned V-I Characteristics - DC Switching characteristics. The findings contribute to the broader field of memristor research, fostering advancements in electronic memory devices and computational systems","PeriodicalId":310227,"journal":{"name":"International Journal Of Scientific Research In Engineering & Technology","volume":"34 6","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Study on Unified Modelling Approach for Memristor: Next Generation Semiconductor Devices\",\"authors\":\"Dr. K. Paramasivam, Ameer M, Bala Krishna R M, Kishore K\",\"doi\":\"10.59256/ijsreat.20240403005\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This research investigates the voltage-current (V-I) characteristics of three distinct memristor models, each representing a unique composition and behaviour. The model, denoted as TiN-TiOx-HfOx-Pt-Bilayered Memristor model, is a compact representation designed for Metal–Oxide Resistive Random Access Memory (RRAM). Matlab tool is used for the simulation to analyse V-I characteristics of Memristor. Through comprehensive analysis and simulations, we aim to provide a detailed insight into the intrinsic behaviours of the memristor models. Understanding the V-I characteristics of these models is crucial for their potential applications in emerging memory technologies. This Study elaborate the mathematical modelling of memristor with the outcome untuned V-I Characteristics - DC Switching characteristics. The findings contribute to the broader field of memristor research, fostering advancements in electronic memory devices and computational systems\",\"PeriodicalId\":310227,\"journal\":{\"name\":\"International Journal Of Scientific Research In Engineering & Technology\",\"volume\":\"34 6\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal Of Scientific Research In Engineering & Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.59256/ijsreat.20240403005\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal Of Scientific Research In Engineering & Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.59256/ijsreat.20240403005","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Study on Unified Modelling Approach for Memristor: Next Generation Semiconductor Devices
This research investigates the voltage-current (V-I) characteristics of three distinct memristor models, each representing a unique composition and behaviour. The model, denoted as TiN-TiOx-HfOx-Pt-Bilayered Memristor model, is a compact representation designed for Metal–Oxide Resistive Random Access Memory (RRAM). Matlab tool is used for the simulation to analyse V-I characteristics of Memristor. Through comprehensive analysis and simulations, we aim to provide a detailed insight into the intrinsic behaviours of the memristor models. Understanding the V-I characteristics of these models is crucial for their potential applications in emerging memory technologies. This Study elaborate the mathematical modelling of memristor with the outcome untuned V-I Characteristics - DC Switching characteristics. The findings contribute to the broader field of memristor research, fostering advancements in electronic memory devices and computational systems
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