利用表面活性键合技术在周期性抛光的氧化镁:氧化钽锂中制造用于大功率波长转换的埋入式退火质子交换波导

Ryosuke Noro, Masahide Okazaki, M. Uemukai, T. Tanikawa, R. Katayama
{"title":"利用表面活性键合技术在周期性抛光的氧化镁:氧化钽锂中制造用于大功率波长转换的埋入式退火质子交换波导","authors":"Ryosuke Noro, Masahide Okazaki, M. Uemukai, T. Tanikawa, R. Katayama","doi":"10.35848/1347-4065/ad4c43","DOIUrl":null,"url":null,"abstract":"\n Watt-class UV laser lights with symmetric spatial modes are suitable for high-resolution industrial applications. Channel waveguides with a guided mode of several ten microns diameter in MgO:LiTaO3 enhance integration capability while avoiding photorefractive damages during high-power wavelength conversion. We focused on buried waveguides fabricated by proton exchange, surface activated bonding (SAB) and proton diffusion processes in periodically-poled (PP) MgO:LiTaO3. In this work, the mode profiles were simulated using the proton diffusion coefficients estimated by secondary ion mass spectrometry. Using the simulation results, the buried waveguides with a mode diameter of larger than 30 μm were fabricated. By adopting designed PP structures, second harmonic generation (SHG) devices at a wavelength of 532 nm were fabricated. The nonlinear coupling coefficient was estimated to be 0.15 W−1/2 cm−1. Compared to the conventional annealed proton-exchanged waveguide SHG device without SAB, symmetric guided modes were obtained while maintaining the nonlinear coupling coefficient.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"13 2","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Buried annealed proton-exchanged waveguide in periodically-poled MgO:LiTaO3 fabricated by surface activated bonding for high-power wavelength conversion\",\"authors\":\"Ryosuke Noro, Masahide Okazaki, M. Uemukai, T. Tanikawa, R. Katayama\",\"doi\":\"10.35848/1347-4065/ad4c43\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n Watt-class UV laser lights with symmetric spatial modes are suitable for high-resolution industrial applications. Channel waveguides with a guided mode of several ten microns diameter in MgO:LiTaO3 enhance integration capability while avoiding photorefractive damages during high-power wavelength conversion. We focused on buried waveguides fabricated by proton exchange, surface activated bonding (SAB) and proton diffusion processes in periodically-poled (PP) MgO:LiTaO3. In this work, the mode profiles were simulated using the proton diffusion coefficients estimated by secondary ion mass spectrometry. Using the simulation results, the buried waveguides with a mode diameter of larger than 30 μm were fabricated. By adopting designed PP structures, second harmonic generation (SHG) devices at a wavelength of 532 nm were fabricated. The nonlinear coupling coefficient was estimated to be 0.15 W−1/2 cm−1. Compared to the conventional annealed proton-exchanged waveguide SHG device without SAB, symmetric guided modes were obtained while maintaining the nonlinear coupling coefficient.\",\"PeriodicalId\":505044,\"journal\":{\"name\":\"Japanese Journal of Applied Physics\",\"volume\":\"13 2\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Japanese Journal of Applied Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.35848/1347-4065/ad4c43\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad4c43","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

具有对称空间模式的瓦特级紫外激光器适用于高分辨率工业应用。在 MgO:LiTaO3 中具有直径为几十微米的引导模式的通道波导可提高集成能力,同时避免在高功率波长转换过程中产生光折射损伤。我们重点研究了通过质子交换、表面活性键合(SAB)和质子扩散工艺在周期性抛光(PP)氧化镁:氧化钽锂(MgO:LiTaO3)中制造的埋入式波导。在这项工作中,利用二次离子质谱法估算的质子扩散系数模拟了模式剖面。利用模拟结果,制造出了模式直径大于 30 μm 的埋入式波导。通过采用设计的 PP 结构,制造出了波长为 532 nm 的二次谐波发生(SHG)器件。非线性耦合系数估计为 0.15 W-1/2 cm-1。与不带 SAB 的传统退火质子交换波导 SHG 器件相比,在保持非线性耦合系数的同时,还获得了对称导波模式。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Buried annealed proton-exchanged waveguide in periodically-poled MgO:LiTaO3 fabricated by surface activated bonding for high-power wavelength conversion
Watt-class UV laser lights with symmetric spatial modes are suitable for high-resolution industrial applications. Channel waveguides with a guided mode of several ten microns diameter in MgO:LiTaO3 enhance integration capability while avoiding photorefractive damages during high-power wavelength conversion. We focused on buried waveguides fabricated by proton exchange, surface activated bonding (SAB) and proton diffusion processes in periodically-poled (PP) MgO:LiTaO3. In this work, the mode profiles were simulated using the proton diffusion coefficients estimated by secondary ion mass spectrometry. Using the simulation results, the buried waveguides with a mode diameter of larger than 30 μm were fabricated. By adopting designed PP structures, second harmonic generation (SHG) devices at a wavelength of 532 nm were fabricated. The nonlinear coupling coefficient was estimated to be 0.15 W−1/2 cm−1. Compared to the conventional annealed proton-exchanged waveguide SHG device without SAB, symmetric guided modes were obtained while maintaining the nonlinear coupling coefficient.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Scintillator application of CsPbBr3 quantum dots-embedded SiO2 glasses Influence of bias voltage on the Ar/CH2F2/O2 plasma etching of Si3N4 films Development of a Pb(Zr,Ti)O3 capacitor employing an IrOx/Ir bottom electrode for highly reliable ferroelectric random access memories Monomer diffusion tendencies in complex-shaped materials by vapor deposition polymerization High-performance negative differential resistance characteristics in homoepitaxial AlN/GaN double-barrier resonant tunneling diodes
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1