{"title":"175°YX LiNbO3 薄板上的 3.2 GHz 第一剪切水平模板式波谐振器显示出 24.6% 的带宽","authors":"Ferriady Setiawan, M. Kadota, Shuji Tanaka","doi":"10.35848/1347-4065/ad49f2","DOIUrl":null,"url":null,"abstract":"\n In this study, a first shear horizontal (SH1) mode plate wave resonator for high-frequency and wide-band filters was investigated. From FEM simulation, SH1 mode plate wave exhibited a high phase velocity of 23 km/s and a high electro-mechanical coupling factor (k2) of 37% on (0°, 85°, 0°) LiNbO3 (LN) with a thickness of 0.1λ (λ: wavelength). The SH1 mode resonator was fabricated on a 0.5-0.57 µm thick LN film. An 80 nm Al IDT electrode was formed with λ varied from 4-16 μm. Finally, 50 nm thick Al was deposited to form an electrically short bottom plane, which was required to generate an SH1 mode wave. The fabricated device exhibited a resonance frequency (fr) of 2.24 GHz, an anti-resonance frequency (fa) of 2.8 GHz, a wide fractional bandwidth (FBW) of 20%, an impedance (Z) ratio of 35.4 dB, and TCF of -90.8 ppm/°C at fr and -74.8 ppm/°C at fa.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":" 64","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"3.2 GHz first shear horizontal mode plate wave resonator on 175°YX LiNbO3 thin plate showed 24.6% bandwidth\",\"authors\":\"Ferriady Setiawan, M. Kadota, Shuji Tanaka\",\"doi\":\"10.35848/1347-4065/ad49f2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n In this study, a first shear horizontal (SH1) mode plate wave resonator for high-frequency and wide-band filters was investigated. From FEM simulation, SH1 mode plate wave exhibited a high phase velocity of 23 km/s and a high electro-mechanical coupling factor (k2) of 37% on (0°, 85°, 0°) LiNbO3 (LN) with a thickness of 0.1λ (λ: wavelength). The SH1 mode resonator was fabricated on a 0.5-0.57 µm thick LN film. An 80 nm Al IDT electrode was formed with λ varied from 4-16 μm. Finally, 50 nm thick Al was deposited to form an electrically short bottom plane, which was required to generate an SH1 mode wave. The fabricated device exhibited a resonance frequency (fr) of 2.24 GHz, an anti-resonance frequency (fa) of 2.8 GHz, a wide fractional bandwidth (FBW) of 20%, an impedance (Z) ratio of 35.4 dB, and TCF of -90.8 ppm/°C at fr and -74.8 ppm/°C at fa.\",\"PeriodicalId\":505044,\"journal\":{\"name\":\"Japanese Journal of Applied Physics\",\"volume\":\" 64\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-05-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Japanese Journal of Applied Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.35848/1347-4065/ad49f2\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad49f2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
3.2 GHz first shear horizontal mode plate wave resonator on 175°YX LiNbO3 thin plate showed 24.6% bandwidth
In this study, a first shear horizontal (SH1) mode plate wave resonator for high-frequency and wide-band filters was investigated. From FEM simulation, SH1 mode plate wave exhibited a high phase velocity of 23 km/s and a high electro-mechanical coupling factor (k2) of 37% on (0°, 85°, 0°) LiNbO3 (LN) with a thickness of 0.1λ (λ: wavelength). The SH1 mode resonator was fabricated on a 0.5-0.57 µm thick LN film. An 80 nm Al IDT electrode was formed with λ varied from 4-16 μm. Finally, 50 nm thick Al was deposited to form an electrically short bottom plane, which was required to generate an SH1 mode wave. The fabricated device exhibited a resonance frequency (fr) of 2.24 GHz, an anti-resonance frequency (fa) of 2.8 GHz, a wide fractional bandwidth (FBW) of 20%, an impedance (Z) ratio of 35.4 dB, and TCF of -90.8 ppm/°C at fr and -74.8 ppm/°C at fa.