软土地基上盾构掘进引起的筏式基础建筑物的地应力沉降

IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2024-05-03 DOI:10.1139/cgj-2024-0010
Tian-qi Zhang, Zhenkun Li, Ruikun Wang, Gang Zheng, Huayang Lei, Qi Fan
{"title":"软土地基上盾构掘进引起的筏式基础建筑物的地应力沉降","authors":"Tian-qi Zhang, Zhenkun Li, Ruikun Wang, Gang Zheng, Huayang Lei, Qi Fan","doi":"10.1139/cgj-2024-0010","DOIUrl":null,"url":null,"abstract":"The stress state of soil may affect the building settlements induced by tunnelling, which, however, has not been well understood. In this study, 3D numerical analyses combined with in-situ measurements were performed to investigate the geostress-associated settlements of a raft-foundation building due to tunnelling in soft ground. Basically, two types of geostress fields were investigated: the first type considered the effect of additional stress generated in the foundation soil (FAS) due to building weight; while in the second type, a sequential twin tunnelling was presumed, and the effect of additional soil stress induced by the first tunnel (TAS) on the building response to the second tunnel was considered. The results indicated that FAS may aggravate the stress release of the foundation soil, and thus gave rise to a larger building settlement or inclination. In the sequential tunnelling process, the effect of TAS can be more complex: when the first tunnel lowered the stress of foundation soil, TAS effect of the first tunnel may help reduce the building settlements induced by the second tunnel; otherwise, it may aggravate building settlements. In addition to TAS effect, the sheltering effect was also found to play an important part in twin tunnelling.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"63 6","pages":""},"PeriodicalIF":4.7000,"publicationDate":"2024-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Geostress-associated settlements of a raft-foundation building due to shield tunnelling in soft ground\",\"authors\":\"Tian-qi Zhang, Zhenkun Li, Ruikun Wang, Gang Zheng, Huayang Lei, Qi Fan\",\"doi\":\"10.1139/cgj-2024-0010\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The stress state of soil may affect the building settlements induced by tunnelling, which, however, has not been well understood. In this study, 3D numerical analyses combined with in-situ measurements were performed to investigate the geostress-associated settlements of a raft-foundation building due to tunnelling in soft ground. Basically, two types of geostress fields were investigated: the first type considered the effect of additional stress generated in the foundation soil (FAS) due to building weight; while in the second type, a sequential twin tunnelling was presumed, and the effect of additional soil stress induced by the first tunnel (TAS) on the building response to the second tunnel was considered. The results indicated that FAS may aggravate the stress release of the foundation soil, and thus gave rise to a larger building settlement or inclination. In the sequential tunnelling process, the effect of TAS can be more complex: when the first tunnel lowered the stress of foundation soil, TAS effect of the first tunnel may help reduce the building settlements induced by the second tunnel; otherwise, it may aggravate building settlements. In addition to TAS effect, the sheltering effect was also found to play an important part in twin tunnelling.\",\"PeriodicalId\":3,\"journal\":{\"name\":\"ACS Applied Electronic Materials\",\"volume\":\"63 6\",\"pages\":\"\"},\"PeriodicalIF\":4.7000,\"publicationDate\":\"2024-05-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Electronic Materials\",\"FirstCategoryId\":\"89\",\"ListUrlMain\":\"https://doi.org/10.1139/cgj-2024-0010\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"89","ListUrlMain":"https://doi.org/10.1139/cgj-2024-0010","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

土壤的应力状态可能会影响隧道开挖引起的建筑物沉降,但对这一问题的了解还不够深入。本研究结合三维数值分析和现场测量,研究了在软土地基上开挖隧道造成的筏基建筑与地质应力相关的沉降。基本上,研究了两种类型的地应力场:第一种类型考虑了由于建筑物自重而在地基土中产生的附加应力(FAS)的影响;而在第二种类型中,假定了连续双隧道,并考虑了第一条隧道引起的附加土应力(TAS)对建筑物对第二条隧道响应的影响。结果表明,FAS 可能会加剧地基土的应力释放,从而导致建筑物出现更大的沉降或倾斜。在连续隧道开挖过程中,TAS 的影响可能更为复杂:当第一条隧道降低了地基土的应力时,第一条隧道的 TAS 效应可能有助于减少第二条隧道引起的建筑物沉降;反之,则可能加剧建筑物沉降。除了 TAS 效应外,研究还发现遮挡效应在双线隧道中也发挥着重要作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Geostress-associated settlements of a raft-foundation building due to shield tunnelling in soft ground
The stress state of soil may affect the building settlements induced by tunnelling, which, however, has not been well understood. In this study, 3D numerical analyses combined with in-situ measurements were performed to investigate the geostress-associated settlements of a raft-foundation building due to tunnelling in soft ground. Basically, two types of geostress fields were investigated: the first type considered the effect of additional stress generated in the foundation soil (FAS) due to building weight; while in the second type, a sequential twin tunnelling was presumed, and the effect of additional soil stress induced by the first tunnel (TAS) on the building response to the second tunnel was considered. The results indicated that FAS may aggravate the stress release of the foundation soil, and thus gave rise to a larger building settlement or inclination. In the sequential tunnelling process, the effect of TAS can be more complex: when the first tunnel lowered the stress of foundation soil, TAS effect of the first tunnel may help reduce the building settlements induced by the second tunnel; otherwise, it may aggravate building settlements. In addition to TAS effect, the sheltering effect was also found to play an important part in twin tunnelling.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
期刊最新文献
Issue Publication Information Issue Editorial Masthead Corroborating the Monro-Kellie Principles. High-Performance Flexible Strain Sensor Enhanced by Functionally Partitioned Conductive Network for Intelligent Monitoring of Human Activities Carbon Nanotube-Enhanced Liquid Metal Composite Ink for Strain Sensing and Digital Recognition
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1