在 MoS2/SnSe2 范德华异质结忆晶体管中模拟光电突触功能

Xiaoli Li, Fengxiang Chen, Xiaodong Wang, Lisheng Wang
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摘要

用电子设备模拟人脑的高级突触功能可能是构建高效神经形态系统的有效策略。二维(2D)材料具有优异的光电性能,是制造光电器件的理想候选材料。本文研究了基于层状 MoS2/SnSe2 范德华异质结(vdWH)忆阻器的光电突触。研究发现,典型的突触功能,如兴奋/抑制性突触后电流(EPSC/IPSC)、长期延时/抑制(LTP/LTD)、成对脉冲促进/抑制(PPF/PPD),以及从短期记忆(STM)到长期记忆(LTM)的过渡,都是通过电脉冲和光脉冲作为输入信号来实现的。此外,光脉冲下 PPF 的时间常数为 3.91 秒,与生物神经突触的反应时间相当。因此,MoS2/SnSe2 Memtransistor 可以在未来的人工神经网络中作为电子突触发挥作用,从而激发二维材料在神经形态计算中的应用。
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Emulation of optical and electrical synaptic functions in MoS2/SnSe2 van der Waals heterojunction memtransistors
The simulation of advanced synaptic functions of the human brain by electrical devices could be an effective strategy towards constructing high-efficiency neuromorphic systems. Two-dimensional (2D) materials are promising candidates in fabrication of optoelectronic devices due to their excellent photoelectric performances. Herein, opto-electronic synapses based on layered MoS2/SnSe2 van der Waals heterojunction (vdWH) memtransistors have been investigated. It can be observed that the typical synaptic functions, such as excitatory/inhibitory postsynaptic current (EPSC/IPSC), long-term potentiation/depression (LTP/LTD), paired-pulse facilitation/depression (PPF/PPD), as well as the transition from short-term memory (STM) to long-term memory (LTM) are realized using both electrical and optical pulses as input signals. In addition, the time constant for PPF under optical pulses was 3.91 s, which was comparable with the response times of biological neural synapses. So the MoS2/SnSe2 memtransistor could work as an electronic synapse in future artificial neural networks, inspiring the implementation of 2D materials for neuromorphic computation.
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