Florian Kuhl, Hao Lu, Martin Becker, Limei Chen, Yonghui Zheng, Angelika Polity, Zaoli Zhang, Yunbin He, Peter J. Klar
{"title":"(110)金红石型二氧化钛上的 TixV1-xO2 薄膜在邻近金属-绝缘体转变的低温和高温相的拉曼散射","authors":"Florian Kuhl, Hao Lu, Martin Becker, Limei Chen, Yonghui Zheng, Angelika Polity, Zaoli Zhang, Yunbin He, Peter J. Klar","doi":"10.1002/jrs.6684","DOIUrl":null,"url":null,"abstract":"<p>Vanadium dioxide (VO<sub>2</sub>) undergoes a reversible first-order metal-to-insulator transition (MIT) from a high-temperature metallic phase to a low-temperature insulating phase at a critical temperature <i>T</i><sub>c</sub> of 68°C. The MIT is accompanied by a structural phase transition. In addition to the metallic high-temperature rutile phase, several insulating phases may be involved depending on doping, interfacial stress, or external stimuli. Unambiguously identifying the crystal phases involved in the phase transition is of key interest from the point of view of application as well as fundamental science. We study the impact of Ti doping of VO<sub>2</sub> thin films on (110) rutile TiO<sub>2</sub> substrates. We conduct a careful analysis of structural properties by combining results of x-ray diffraction, Raman spectroscopy, and transmission electron microscopy. The transition temperature <i>T</i><sub>c</sub> of the deposited thin films decreases with increasing Ti-content. All our thin film samples undergo a structural phase transition from the monoclinic M<sub>1</sub>-phase to the rutile R-phase with increasing temperature without passing the intermediate monoclinic M<sub>2</sub>-phase. A careful analysis of polarization and angle-dependent Raman data reveals that, above <i>T</i><sub>c</sub>, the unit cell of the high-temperature rutile Ti<sub><i>x</i></sub>V<sub>1-<i>x</i></sub>O<sub>2</sub> phase is aligned with that of the rutile TiO<sub>2</sub> substrate whereas, below <i>T</i><sub>c</sub>, 180°-domains of the M<sub>1</sub>-phase of Ti<sub><i>x</i></sub>V<sub>1-<i>x</i></sub>O<sub>2</sub> are observed. The structural relationship between TiO<sub>2</sub> substrate and the high respective low-temperature phase of the Ti<sub><i>x</i></sub>V<sub>1-<i>x</i></sub>O<sub>2</sub> determined by Raman spectroscopy is in excellent agreement with TEM results on these samples. Raman spectroscopy is a powerful tool for studying structural changes of VO<sub>2</sub>-based samples in the vicinity of MIT.</p>","PeriodicalId":16926,"journal":{"name":"Journal of Raman Spectroscopy","volume":null,"pages":null},"PeriodicalIF":2.4000,"publicationDate":"2024-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jrs.6684","citationCount":"0","resultStr":"{\"title\":\"Raman scattering of TixV1-xO2 thin films on (110) rutile TiO2 in the low and high temperature phase adjacent to the metal–insulator transition\",\"authors\":\"Florian Kuhl, Hao Lu, Martin Becker, Limei Chen, Yonghui Zheng, Angelika Polity, Zaoli Zhang, Yunbin He, Peter J. Klar\",\"doi\":\"10.1002/jrs.6684\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Vanadium dioxide (VO<sub>2</sub>) undergoes a reversible first-order metal-to-insulator transition (MIT) from a high-temperature metallic phase to a low-temperature insulating phase at a critical temperature <i>T</i><sub>c</sub> of 68°C. The MIT is accompanied by a structural phase transition. In addition to the metallic high-temperature rutile phase, several insulating phases may be involved depending on doping, interfacial stress, or external stimuli. Unambiguously identifying the crystal phases involved in the phase transition is of key interest from the point of view of application as well as fundamental science. We study the impact of Ti doping of VO<sub>2</sub> thin films on (110) rutile TiO<sub>2</sub> substrates. We conduct a careful analysis of structural properties by combining results of x-ray diffraction, Raman spectroscopy, and transmission electron microscopy. The transition temperature <i>T</i><sub>c</sub> of the deposited thin films decreases with increasing Ti-content. All our thin film samples undergo a structural phase transition from the monoclinic M<sub>1</sub>-phase to the rutile R-phase with increasing temperature without passing the intermediate monoclinic M<sub>2</sub>-phase. A careful analysis of polarization and angle-dependent Raman data reveals that, above <i>T</i><sub>c</sub>, the unit cell of the high-temperature rutile Ti<sub><i>x</i></sub>V<sub>1-<i>x</i></sub>O<sub>2</sub> phase is aligned with that of the rutile TiO<sub>2</sub> substrate whereas, below <i>T</i><sub>c</sub>, 180°-domains of the M<sub>1</sub>-phase of Ti<sub><i>x</i></sub>V<sub>1-<i>x</i></sub>O<sub>2</sub> are observed. The structural relationship between TiO<sub>2</sub> substrate and the high respective low-temperature phase of the Ti<sub><i>x</i></sub>V<sub>1-<i>x</i></sub>O<sub>2</sub> determined by Raman spectroscopy is in excellent agreement with TEM results on these samples. Raman spectroscopy is a powerful tool for studying structural changes of VO<sub>2</sub>-based samples in the vicinity of MIT.</p>\",\"PeriodicalId\":16926,\"journal\":{\"name\":\"Journal of Raman Spectroscopy\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.4000,\"publicationDate\":\"2024-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jrs.6684\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Raman Spectroscopy\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/jrs.6684\",\"RegionNum\":3,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"SPECTROSCOPY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Raman Spectroscopy","FirstCategoryId":"92","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jrs.6684","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"SPECTROSCOPY","Score":null,"Total":0}
Raman scattering of TixV1-xO2 thin films on (110) rutile TiO2 in the low and high temperature phase adjacent to the metal–insulator transition
Vanadium dioxide (VO2) undergoes a reversible first-order metal-to-insulator transition (MIT) from a high-temperature metallic phase to a low-temperature insulating phase at a critical temperature Tc of 68°C. The MIT is accompanied by a structural phase transition. In addition to the metallic high-temperature rutile phase, several insulating phases may be involved depending on doping, interfacial stress, or external stimuli. Unambiguously identifying the crystal phases involved in the phase transition is of key interest from the point of view of application as well as fundamental science. We study the impact of Ti doping of VO2 thin films on (110) rutile TiO2 substrates. We conduct a careful analysis of structural properties by combining results of x-ray diffraction, Raman spectroscopy, and transmission electron microscopy. The transition temperature Tc of the deposited thin films decreases with increasing Ti-content. All our thin film samples undergo a structural phase transition from the monoclinic M1-phase to the rutile R-phase with increasing temperature without passing the intermediate monoclinic M2-phase. A careful analysis of polarization and angle-dependent Raman data reveals that, above Tc, the unit cell of the high-temperature rutile TixV1-xO2 phase is aligned with that of the rutile TiO2 substrate whereas, below Tc, 180°-domains of the M1-phase of TixV1-xO2 are observed. The structural relationship between TiO2 substrate and the high respective low-temperature phase of the TixV1-xO2 determined by Raman spectroscopy is in excellent agreement with TEM results on these samples. Raman spectroscopy is a powerful tool for studying structural changes of VO2-based samples in the vicinity of MIT.
期刊介绍:
The Journal of Raman Spectroscopy is an international journal dedicated to the publication of original research at the cutting edge of all areas of science and technology related to Raman spectroscopy. The journal seeks to be the central forum for documenting the evolution of the broadly-defined field of Raman spectroscopy that includes an increasing number of rapidly developing techniques and an ever-widening array of interdisciplinary applications.
Such topics include time-resolved, coherent and non-linear Raman spectroscopies, nanostructure-based surface-enhanced and tip-enhanced Raman spectroscopies of molecules, resonance Raman to investigate the structure-function relationships and dynamics of biological molecules, linear and nonlinear Raman imaging and microscopy, biomedical applications of Raman, theoretical formalism and advances in quantum computational methodology of all forms of Raman scattering, Raman spectroscopy in archaeology and art, advances in remote Raman sensing and industrial applications, and Raman optical activity of all classes of chiral molecules.