(110)金红石型二氧化钛上的 TixV1-xO2 薄膜在邻近金属-绝缘体转变的低温和高温相的拉曼散射

IF 2.4 3区 化学 Q2 SPECTROSCOPY Journal of Raman Spectroscopy Pub Date : 2024-05-23 DOI:10.1002/jrs.6684
Florian Kuhl, Hao Lu, Martin Becker, Limei Chen, Yonghui Zheng, Angelika Polity, Zaoli Zhang, Yunbin He, Peter J. Klar
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引用次数: 0

摘要

二氧化钒(VO2)在 68°C 的临界温度 Tc 下发生了从高温金属相到低温绝缘相的可逆一阶金属-绝缘体转变(MIT)。MIT 伴随着结构相变。除了金属高温金红石相之外,根据掺杂、界面应力或外部刺激的不同,还可能涉及多个绝缘相。从应用和基础科学的角度来看,明确确定相变中涉及的晶体相是非常重要的。我们研究了在 (110) 金红石型二氧化钛基底上掺杂 Ti 对 VO2 薄膜的影响。我们结合 X 射线衍射、拉曼光谱和透射电子显微镜的结果,对结构特性进行了仔细分析。沉积薄膜的转变温度 Tc 随着钛含量的增加而降低。随着温度的升高,我们的所有薄膜样品都经历了从单斜M1相到金红石R相的结构相变,而没有经过中间的单斜M2相。对偏振和角度依赖性拉曼数据进行仔细分析后发现,在 Tc 以上,高温金红石型 TixV1-xO2 相的单胞与金红石型 TiO2 基底的单胞对齐,而在 Tc 以下,则观察到 TixV1-xO2 的 M1 相的 180° 域。拉曼光谱确定的二氧化钛基底与 TixV1-xO2 高温相和低温相之间的结构关系与这些样品的 TEM 结果非常吻合。拉曼光谱是研究麻省理工学院附近 VO2 基样品结构变化的有力工具。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Raman scattering of TixV1-xO2 thin films on (110) rutile TiO2 in the low and high temperature phase adjacent to the metal–insulator transition

Vanadium dioxide (VO2) undergoes a reversible first-order metal-to-insulator transition (MIT) from a high-temperature metallic phase to a low-temperature insulating phase at a critical temperature Tc of 68°C. The MIT is accompanied by a structural phase transition. In addition to the metallic high-temperature rutile phase, several insulating phases may be involved depending on doping, interfacial stress, or external stimuli. Unambiguously identifying the crystal phases involved in the phase transition is of key interest from the point of view of application as well as fundamental science. We study the impact of Ti doping of VO2 thin films on (110) rutile TiO2 substrates. We conduct a careful analysis of structural properties by combining results of x-ray diffraction, Raman spectroscopy, and transmission electron microscopy. The transition temperature Tc of the deposited thin films decreases with increasing Ti-content. All our thin film samples undergo a structural phase transition from the monoclinic M1-phase to the rutile R-phase with increasing temperature without passing the intermediate monoclinic M2-phase. A careful analysis of polarization and angle-dependent Raman data reveals that, above Tc, the unit cell of the high-temperature rutile TixV1-xO2 phase is aligned with that of the rutile TiO2 substrate whereas, below Tc, 180°-domains of the M1-phase of TixV1-xO2 are observed. The structural relationship between TiO2 substrate and the high respective low-temperature phase of the TixV1-xO2 determined by Raman spectroscopy is in excellent agreement with TEM results on these samples. Raman spectroscopy is a powerful tool for studying structural changes of VO2-based samples in the vicinity of MIT.

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来源期刊
CiteScore
5.40
自引率
8.00%
发文量
185
审稿时长
3.0 months
期刊介绍: The Journal of Raman Spectroscopy is an international journal dedicated to the publication of original research at the cutting edge of all areas of science and technology related to Raman spectroscopy. The journal seeks to be the central forum for documenting the evolution of the broadly-defined field of Raman spectroscopy that includes an increasing number of rapidly developing techniques and an ever-widening array of interdisciplinary applications. Such topics include time-resolved, coherent and non-linear Raman spectroscopies, nanostructure-based surface-enhanced and tip-enhanced Raman spectroscopies of molecules, resonance Raman to investigate the structure-function relationships and dynamics of biological molecules, linear and nonlinear Raman imaging and microscopy, biomedical applications of Raman, theoretical formalism and advances in quantum computational methodology of all forms of Raman scattering, Raman spectroscopy in archaeology and art, advances in remote Raman sensing and industrial applications, and Raman optical activity of all classes of chiral molecules.
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