High aspect ratio SiO2/SiN (ON) stacked layer etching using C3HF5, C4H2F6, and C4H4F6

High aspect ratio SiO2/SiN (ON) stacked layer etching using hydrofluorocarbon gases was conducted with various ratios of H, F, and C to achieve higher etching rates and precise profile control. The experimental gases were C3HF5, C4HF5, C4H2F4, C4H2F6, C4H4F6 and C5H2F10. The oxygen gas flow rate and mixing ratio were optimized to maximize mask selectivity while avoiding clogging at the top of the mask. For comparison, C4F6/CH2F2/Ar/O2, and C4F6/C4F8/CH2F2/Ar/O2 were used as reference gas mixtures. The initial screening narrowed the candidate pool to 3 gases: C3HF5, C4H2F6, and C4H4F6. At equivalent power, the C3HF5 condition achieved a 15% faster ON etch rate, and C4H2F6 achieved a 9% faster ON etch rate compared to the reference condition. Only C4H4F6 showed a worse ON etch rate than the reference (~33%) due to severe mask clogging. Furthermore, C3HF5 achieved a 29% faster ON etch rate under high power conditions. It also achieved a 57% faster ON etch rate without excessively compromising selectivity or bow CD expansion after optimization. We report detailed comparisons of etch rate and clogging while controlling the CD profile in the ON stack process.