优化三维铁电存储器的 TiN/Si:HfO2 接口空隙缺陷

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Semiconductor Manufacturing Pub Date : 2024-05-21 DOI:10.1109/tsm.2024.3403230

Dongxue Zhao, Zhiliang Xia, Yi Yang, Meiying Liu, Yuancheng Yang, Zongliang Huo

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Optimization of Void Defects at TiN/Si:HfO2 Interface for 3D Ferroelectric Memory

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来源期刊

IEEE Transactions on Semiconductor Manufacturing 工程技术-工程：电子与电气

CiteScore

5.20

自引率

11.10%

发文量

101

审稿时长

3.3 months

期刊介绍： The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.

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